This study combines direct measurements of channel strain, electrical mobility measurements and a rigorous modeling approach to provide insight about the strain induced mobility enhancement in FinFETs and guidelines for the device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at device level by a novel technique. A large vertical compressive strain is observed in FinFETs and the simulations show that this helps recover the electron mobility disadvantage of the (110) FinFETs lateral interfaces w.r.t. (100) interfaces, with no degradation of the hole mobility. The model is then used to systematically explore the impact of the fin-width, fin-height and fin-length stress components on n- and p-FinFETs mobility and to identify optimal stress configurations.

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs / Serra, N; Conzatti, F; Esseni, David; DE MICHIELIS, M; Palestri, Pierpaolo; Selmi, Luca; Thomas, S; WHALL T., E; PARKER E. H., C; LEADLEY D., R; Witters, L; Hikavyy, A; HYTCH M., J; Houdellier, F; Snoeck, E; WANG T., J; LEE W., C; Vellianitis, G; VAN DAL M. J., H; Duriez, B; Doornbos, G; Lander, R. J. P.. - (2009), pp. 71-73. (Intervento presentato al convegno 2009 International Electron Devices Meeting, IEDM 2009 tenutosi a Baltimore, MD, usa nel dicembre) [10.1109/IEDM.2009.5424419].

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

PALESTRI, Pierpaolo;SELMI, Luca;
2009

Abstract

This study combines direct measurements of channel strain, electrical mobility measurements and a rigorous modeling approach to provide insight about the strain induced mobility enhancement in FinFETs and guidelines for the device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at device level by a novel technique. A large vertical compressive strain is observed in FinFETs and the simulations show that this helps recover the electron mobility disadvantage of the (110) FinFETs lateral interfaces w.r.t. (100) interfaces, with no degradation of the hole mobility. The model is then used to systematically explore the impact of the fin-width, fin-height and fin-length stress components on n- and p-FinFETs mobility and to identify optimal stress configurations.
2009
2009 International Electron Devices Meeting, IEDM 2009
Baltimore, MD, usa
dicembre
71
73
Serra, N; Conzatti, F; Esseni, David; DE MICHIELIS, M; Palestri, Pierpaolo; Selmi, Luca; Thomas, S; WHALL T., E; PARKER E. H., C; LEADLEY D., R; Witters, L; Hikavyy, A; HYTCH M., J; Houdellier, F; Snoeck, E; WANG T., J; LEE W., C; Vellianitis, G; VAN DAL M. J., H; Duriez, B; Doornbos, G; Lander, R. J. P.
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs / Serra, N; Conzatti, F; Esseni, David; DE MICHIELIS, M; Palestri, Pierpaolo; Selmi, Luca; Thomas, S; WHALL T., E; PARKER E. H., C; LEADLEY D., R; Witters, L; Hikavyy, A; HYTCH M., J; Houdellier, F; Snoeck, E; WANG T., J; LEE W., C; Vellianitis, G; VAN DAL M. J., H; Duriez, B; Doornbos, G; Lander, R. J. P.. - (2009), pp. 71-73. (Intervento presentato al convegno 2009 International Electron Devices Meeting, IEDM 2009 tenutosi a Baltimore, MD, usa nel dicembre) [10.1109/IEDM.2009.5424419].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163324
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