We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.

We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley/multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD / Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L. - 134366:(2017), pp. 322-325. ((Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a San Francisco, CA, USA nel 2-6 Dec. 2017 [10.1109/IEDM.2017.8268384].

Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD

Zagni, N.;Pavan, P.;Puglisi, F. M.;Verzellesi, G.;Selmi L
2017

Abstract

We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.
63rd IEEE International Electron Devices Meeting, IEDM 2017
San Francisco, CA, USA
2-6 Dec. 2017
134366
322
325
Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD / Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L. - 134366:(2017), pp. 322-325. ((Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a San Francisco, CA, USA nel 2-6 Dec. 2017 [10.1109/IEDM.2017.8268384].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1160613
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