ZAGNI, NICOLO'

ZAGNI, NICOLO'  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Risultati 1 - 20 di 38 (tempo di esecuzione: 0.028 secondi).
Titolo Data di pubblicazione Autore(i) File
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 1-gen-2020 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 1-gen-2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 1-gen-2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 1-gen-2021 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 1-gen-2016 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 1-gen-2020 Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 1-gen-2019 Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G.
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 1-gen-2021 Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 1-gen-2018 Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 1-gen-2021 Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 1-gen-2022 Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 1-gen-2022 Cioni, M.; Zagni, N.; Chini, A.
GaN-based power devices: Physics, reliability, and perspectives 1-gen-2021 Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 1-gen-2019 Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 1-gen-2021 Hong, Seongin; Zagni, Nicolo'; Choo, Sooho; Liu, Na; Baek, Seungho; Bala, Arindam; Yoo, Hocheon; Ha Kang, Byung; Jae Kim, Hyun; Joong Yun, Hyung; Ashraful Alam, Muhammad; Kim, Sunkook
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 1-gen-2021 Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 1-gen-2017 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Insights into the off-state breakdown mechanisms in power GaN HEMTs 1-gen-2019 Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 1-gen-2021 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
A memory window expression to evaluate the endurance of ferroelectric FETs 1-gen-2020 Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad