ZAGNI, NICOLO'

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ZAGNI, NICOLO'

Afferenza

Dipartimento di Ingegneria "Enzo Ferrari"

Pubblicazioni

Risultati 1 - 20 di 26 (tempo di esecuzione: 0.0 secondi).

	Titolo	Data di pubblicazione	Autore(i)
1	Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs	2020	Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
2	Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes	2017	Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
3	Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective	2018	Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
4	Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs	2016	Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
5	The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs	2020	Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
6	Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs	2019	Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G.
7	Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model	2018	Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
8	Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs	2021	Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
9	Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity	2019	Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.
10	“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs	2020	Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni
11	The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs	2017	Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
12	Insights into the off-state breakdown mechanisms in power GaN HEMTs	2019	ZAGNI, NICOLO'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.
13	Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs	2021	Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
14	A memory window expression to evaluate the endurance of ferroelectric FETs	2020	Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad
15	Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo	23-mar-2021	Zagni, Nicolo'
16	Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD	2017	Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L
17	A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design	2017	Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
18	On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs	2018	Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
19	Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect	2017	Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
20	Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design	2018	Puglisi, Francesco Maria; Zagni, Nicolo; Larcher, Luca; Pavan, Paolo