ItalianoZAGNI, NICOLO'
Dettaglio
ZAGNI, NICOLO'
Dipartimento di Ingegneria "Enzo Ferrari"
Pubblicazioni
Risultati 1 - 20 di 32 (tempo di esecuzione: 0.001 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs | 2020 | Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 2 | Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes | 2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 3 | Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective | 2018 | Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A. |
| 4 | Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs | 2016 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni |
| 5 | The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs | 2020 | Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni |
| 6 | Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs | 2019 | Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G. |
| 7 | Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs | 2021 | Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro |
| 8 | Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model | 2018 | Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo |
| 9 | Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs | 2021 | Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro |
| 10 | Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity | 2019 | Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D. |
| 11 | Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry | 2021 | Hong, Seongin; Zagni, Nicolo'; Choo, Sooho; Liu, Na; Baek, Seungho; Bala, Arindam; Yoo, Hocheon; Ha Kang, Byung; Jae Kim, Hyun; Joong Yun, Hyung; Ashraful Alam, Muhammad; Kim, Sunkook |
| 12 | “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs | 2021 | Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni |
| 13 | The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs | 2017 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni |
| 14 | Insights into the off-state breakdown mechanisms in power GaN HEMTs | 2019 | Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G. |
| 15 | Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs | 2021 | Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni |
| 16 | A memory window expression to evaluate the endurance of ferroelectric FETs | 2020 | Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad |
| 17 | Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo | 23-mar-2021 | Zagni, Nicolo' |
| 18 | Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach | 2021 | Caruso, Enrico; Esseni, David; Gnani, Elena; Lizzit, Daniel; Palestri, Pierpaolo; Pin, Alessandro; Puglisi, Francesco Maria; Selmi, Luca; Zagni, Nicolò |
| 19 | Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | 2017 | Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L |
| 20 | A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design | 2017 | Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo |
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