ZAGNI, NICOLO'
ZAGNI, NICOLO'
Dipartimento di Ingegneria "Enzo Ferrari"
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs
2020-01-01 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes
2017-01-01 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
2018-01-01 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs
2021-01-01 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs
2016-01-01 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs
2020-01-01 Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs
2019-01-01 Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G.
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
2021-01-01 Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model
2018-01-01 Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs
2021-01-01 Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs
2022-01-01 Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications
2022-01-01 Cioni, M.; Zagni, N.; Chini, A.
GaN-based power devices: Physics, reliability, and perspectives
2021-01-01 Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity
2019-01-01 Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
2021-01-01 Hong, Seongin; Zagni, Nicolo'; Choo, Sooho; Liu, Na; Baek, Seungho; Bala, Arindam; Yoo, Hocheon; Ha Kang, Byung; Jae Kim, Hyun; Joong Yun, Hyung; Ashraful Alam, Muhammad; Kim, Sunkook
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
2021-01-01 Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs
2017-01-01 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Insights into the off-state breakdown mechanisms in power GaN HEMTs
2019-01-01 Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
2021-01-01 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
A memory window expression to evaluate the endurance of ferroelectric FETs
2020-01-01 Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs | 1-gen-2020 | Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo | |
| Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes | 1-gen-2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo | |
| Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective | 1-gen-2018 | Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A. | |
| Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs | 1-gen-2021 | Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro | |
| Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs | 1-gen-2016 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni | |
| The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs | 1-gen-2020 | Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni | |
| Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs | 1-gen-2019 | Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G. | |
| Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs | 1-gen-2021 | Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro | |
| Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model | 1-gen-2018 | Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo | |
| Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs | 1-gen-2021 | Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro | |
| Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs | 1-gen-2022 | Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro | |
| Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications | 1-gen-2022 | Cioni, M.; Zagni, N.; Chini, A. | |
| GaN-based power devices: Physics, reliability, and perspectives | 1-gen-2021 | Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison | |
| Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity | 1-gen-2019 | Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D. | |
| Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry | 1-gen-2021 | Hong, Seongin; Zagni, Nicolo'; Choo, Sooho; Liu, Na; Baek, Seungho; Bala, Arindam; Yoo, Hocheon; Ha Kang, Byung; Jae Kim, Hyun; Joong Yun, Hyung; Ashraful Alam, Muhammad; Kim, Sunkook | |
| “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs | 1-gen-2021 | Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni | |
| The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs | 1-gen-2017 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni | |
| Insights into the off-state breakdown mechanisms in power GaN HEMTs | 1-gen-2019 | Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G. | |
| Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs | 1-gen-2021 | Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni | |
| A memory window expression to evaluate the endurance of ferroelectric FETs | 1-gen-2020 | Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad |