ZAGNI, NICOLO'

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Pubblicazioni (Tutti)

Risultati 1 - 11 di 11 (tempo di esecuzione: 0.001 secondi).

	Titolo	Data di pubblicazione	Autore(i)
1	Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective	2017	Zagni, Nicolò; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
2	Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs	2017	Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
3	Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design	2018	Puglisi, Francesco Maria; Zagni, Nicolo; Larcher, Luca; Pavan, Paolo
4	Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect	2017	Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
5	On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs	2018	Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
6	A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design	2017	Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
7	Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD	2017	Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L
8	The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs	2017	Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
9	Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model	2018	Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
10	Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs	2016	Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
11	Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes	2017	Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo

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ZAGNI, NICOLO'