ZAGNI, NICOLO'
ZAGNI, NICOLO'
Dipartimento di Ingegneria "Enzo Ferrari"
A memory window expression to evaluate the endurance of ferroelectric FETs
2020 Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design
2017 Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps
2022 Cioni, Marcello; Zagni, Nicolo; Chini, Alessandro
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
2023 Pujar, Pavan; Cho, Haewon; Kim, Young-Hoon; Zagni, Nicolo; Oh, Jeonghyeon; Lee, Eunha; Gandla, Srinivas; Nukala, Pavan; Kim, Young-Min; Alam, Muhammad Ashraful; Kim, Sunkook
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs
2020 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes
2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors
2024 Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs
2021 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs
2016 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs
2019 Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G.
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
2021 Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model
2018 Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs
2021 Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs
2024 Zagni, N.; Fregolent, M.; Verzellesi, G.; Bergamin, F.; Favero, D.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Huber, C.; Meneghini, M.; Pavan, P.
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs
2022 Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications
2022 Cioni, M.; Zagni, N.; Chini, A.
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)
2024 Zagni, N.
GaN-based power devices: Physics, reliability, and perspectives
2021 Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
2023 Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A memory window expression to evaluate the endurance of ferroelectric FETs | 1-gen-2020 | Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad | |
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design | 1-gen-2017 | Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo | |
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps | 1-gen-2022 | Cioni, Marcello; Zagni, Nicolo; Chini, Alessandro | |
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors | 1-gen-2023 | Pujar, Pavan; Cho, Haewon; Kim, Young-Hoon; Zagni, Nicolo; Oh, Jeonghyeon; Lee, Eunha; Gandla, Srinivas; Nukala, Pavan; Kim, Young-Min; Alam, Muhammad Ashraful; Kim, Sunkook | |
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs | 1-gen-2020 | Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo | |
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes | 1-gen-2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo | |
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors | 1-gen-2024 | Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo | |
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective | 1-gen-2018 | Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A. | |
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs | 1-gen-2021 | Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro | |
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs | 1-gen-2016 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni | |
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs | 1-gen-2019 | Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G. | |
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs | 1-gen-2021 | Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro | |
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model | 1-gen-2018 | Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo | |
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs | 1-gen-2021 | Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro | |
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs | 1-gen-2024 | Zagni, N.; Fregolent, M.; Verzellesi, G.; Bergamin, F.; Favero, D.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Huber, C.; Meneghini, M.; Pavan, P. | |
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs | 1-gen-2022 | Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro | |
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications | 1-gen-2022 | Cioni, M.; Zagni, N.; Chini, A. | |
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) | 1-gen-2024 | Zagni, N. | |
GaN-based power devices: Physics, reliability, and perspectives | 1-gen-2021 | Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison | |
Gate-Bias Induced RON Instability in p-GaN Power HEMTs | 1-gen-2023 | Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando |