In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of C – V curves in vertical Al 2 O 3 /gallium-nitride (GaN) MOS capacitors. First, pulsed C – V curves were characterized during the application of quiescent gate bias stresses of different magnitudes and signs. This characterization revealed four main distinctive features: 1) rightward rigid shift; 2) leftward rigid shift; 3) decrease of the Δ C – Δ V slope; and 4) formation of a hump in a gate bias range before the accumulation of electrons at the oxide/semiconductor interface. By means of a combined experimental/simulation analysis, these features were univocally attributed to specific ITs or BTs in the overall trap distribution. The simulation-aided analysis enhances the physical understanding of the C – V curves features and increases the dependability of the adopted IT measurement technique, allowing for a more rapid process optimization and device technology development.

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors / Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - (2023), pp. 1-6. [10.1109/TED.2023.3335032]

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors

Zagni, Nicolo';Verzellesi, Giovanni;Pavan, Paolo
2023

Abstract

In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of C – V curves in vertical Al 2 O 3 /gallium-nitride (GaN) MOS capacitors. First, pulsed C – V curves were characterized during the application of quiescent gate bias stresses of different magnitudes and signs. This characterization revealed four main distinctive features: 1) rightward rigid shift; 2) leftward rigid shift; 3) decrease of the Δ C – Δ V slope; and 4) formation of a hump in a gate bias range before the accumulation of electrons at the oxide/semiconductor interface. By means of a combined experimental/simulation analysis, these features were univocally attributed to specific ITs or BTs in the overall trap distribution. The simulation-aided analysis enhances the physical understanding of the C – V curves features and increases the dependability of the adopted IT measurement technique, allowing for a more rapid process optimization and device technology development.
2023
1
6
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors / Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - (2023), pp. 1-6. [10.1109/TED.2023.3335032]
Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo
File in questo prodotto:
File Dimensione Formato  
J31.pdf

Open access

Tipologia: Versione pubblicata dall'editore
Dimensione 3.56 MB
Formato Adobe PDF
3.56 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1327526
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact