In this paper, we investigate the evolution of threshold voltage (VTH) and on-resistance (RON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. Measurements were performed for 1000 s, during which negative VTH shifts (i.e., VTH decrease) and negative RON drifts (i.e., RON decrease) were observed. To better understand the origin of these parameter drifts and their possible correlation, measurements were performed for different (i) gate-driving voltage (VGH) and (ii) off-state drain voltage (VPH). We found that VTH reduction leads to a current increase, thus yielding RON to decrease. This correlation was explained by the RON dependence on the overdrive voltage (VGS–VTH). We also found that gate-related effects dominate the parameter drifts at low VPH with no observable recovery, due to the repeated switching of the gate signal required for the parameter monitoring. Conversely, the drain-induced instabilities caused by high VPH are completely recoverable within 1000 s from the VPH removal. These results show that the measurement setup is able to discern the gate/drain contributions, clarifying the origin of the observed VTH and RON drifts.

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs / Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro. - In: ELECTRONICS. - ISSN 2079-9292. - 10:4(2021), pp. 1-12. [10.3390/electronics10040441]

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Cioni Marcello;Bertacchini Alessandro;Zagni Nicolò;Verzellesi Giovanni;Pavan Paolo;Chini Alessandro
2021

Abstract

In this paper, we investigate the evolution of threshold voltage (VTH) and on-resistance (RON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. Measurements were performed for 1000 s, during which negative VTH shifts (i.e., VTH decrease) and negative RON drifts (i.e., RON decrease) were observed. To better understand the origin of these parameter drifts and their possible correlation, measurements were performed for different (i) gate-driving voltage (VGH) and (ii) off-state drain voltage (VPH). We found that VTH reduction leads to a current increase, thus yielding RON to decrease. This correlation was explained by the RON dependence on the overdrive voltage (VGS–VTH). We also found that gate-related effects dominate the parameter drifts at low VPH with no observable recovery, due to the repeated switching of the gate signal required for the parameter monitoring. Conversely, the drain-induced instabilities caused by high VPH are completely recoverable within 1000 s from the VPH removal. These results show that the measurement setup is able to discern the gate/drain contributions, clarifying the origin of the observed VTH and RON drifts.
10-feb-2021
10
4
1
12
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs / Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro. - In: ELECTRONICS. - ISSN 2079-9292. - 10:4(2021), pp. 1-12. [10.3390/electronics10040441]
Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
File in questo prodotto:
File Dimensione Formato  
J14.pdf

accesso aperto

Descrizione: Articolo Principale
Tipologia: Versione dell'editore (versione pubblicata)
Dimensione 593.32 kB
Formato Adobe PDF
593.32 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1232775
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 2
social impact