We investigate the reliability of state-of-the-art SiGe heterojunction bipolar transistors (HBTs) in 55-nm technology under mixed-mode stress. We perform electrical characterization and implement a TCAD model calibrated on the measurement data to describe the increased base current degradation at different collector-base voltages. We introduce a simple and self-consistent simulation methodology that links the observed degradation trend to interface traps generation at the emitter/base spacer oxide ascribed to hot holes generated by impact ionization (II) in the collector/base depletion region. This effectively circumvents the limitations of commercial TCAD tools that do not allow II to be the driving force of the degradation. The approach accounts for self-heating and electric fields distribution allowing to reproduce measurement data including the deviation from the power-law behavior.

Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs / Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - (2020), pp. 4597-4601. [10.1109/TED.2020.3018103]

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