In this paper, we investigate the influence of Poole-Frenkel Effect (PFE) on the dynamic RON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic RON transients acquired during OFF-state stress (i.e., VGS,STR = 0 V < VT, VDS,STR = 25–125 V) and we interpret the results with the aid of numerical simulations. We find that dynamic RON transients at room temperature accelerate with VDS,STR1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (EA) extracted from the Arrhenius plot of the dynamic RON transients at VDS,STR = 50 V and T = 30–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on VDS,STR1/2 and consequent EA reduction only when including PFE enhancement of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic RON increase during OFF-state stress.

Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs / Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 37:2(2022), pp. 1-5. [10.1088/1361-6641/ac4113]

Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs

Zagni, Nicolò
;
Cioni, Marcello;Verzellesi, Giovanni;Chini, Alessandro
2022

Abstract

In this paper, we investigate the influence of Poole-Frenkel Effect (PFE) on the dynamic RON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic RON transients acquired during OFF-state stress (i.e., VGS,STR = 0 V < VT, VDS,STR = 25–125 V) and we interpret the results with the aid of numerical simulations. We find that dynamic RON transients at room temperature accelerate with VDS,STR1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (EA) extracted from the Arrhenius plot of the dynamic RON transients at VDS,STR = 50 V and T = 30–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on VDS,STR1/2 and consequent EA reduction only when including PFE enhancement of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic RON increase during OFF-state stress.
20-dic-2021
37
2
1
5
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs / Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 37:2(2022), pp. 1-5. [10.1088/1361-6641/ac4113]
Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1256717
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