We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.
We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self-consistent Monte Carlo loop is proposed and verified against the widely employed method based on look-up tables.
Modeling electrostatic doping and series resistance in graphene-FETs / Venica, Stefano; Zanato, Massimiliano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2016), pp. 357-360. (Intervento presentato al convegno 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Norimberga (GER) nel 6 -8 September 2016) [10.1109/SISPAD.2016.7605220].
Modeling electrostatic doping and series resistance in graphene-FETs
SELMI, Luca
2016-01-01
Abstract
We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.
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