We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.
We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self-consistent Monte Carlo loop is proposed and verified against the widely employed method based on look-up tables.
Modeling electrostatic doping and series resistance in graphene-FETs / Venica, Stefano; Zanato, Massimiliano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2016), pp. 357-360. ((Intervento presentato al convegno 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Norimberga (GER) nel 6 -8 September 2016.
Data di pubblicazione: | 2016 |
Titolo: | Modeling electrostatic doping and series resistance in graphene-FETs |
Autore/i: | Venica, Stefano; Zanato, Massimiliano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/SISPAD.2016.7605220 |
Codice identificativo Scopus: | 2-s2.0-85015657874 |
Codice identificativo ISI: | WOS:000386893600086 |
Nome del convegno: | 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
Luogo del convegno: | Norimberga (GER) |
Data del convegno: | 6 -8 September 2016 |
Pagina iniziale: | 357 |
Pagina finale: | 360 |
Citazione: | Modeling electrostatic doping and series resistance in graphene-FETs / Venica, Stefano; Zanato, Massimiliano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2016), pp. 357-360. ((Intervento presentato al convegno 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Norimberga (GER) nel 6 -8 September 2016. |
Tipologia | Relazione in Atti di Convegno |
File in questo prodotto:
File | Descrizione | Tipologia | |
---|---|---|---|
sispad-2016-proceedings.pdf | N/A | Administrator Richiedi una copia |

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris