In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers / Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - (2010), pp. 724-727. (Intervento presentato al convegno International Electron Devices Meeting (IEDM) tenutosi a San Francisco (USA), dicembre 2010 nel Dicembre) [10.1109/IEDM.2010.5703461].
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers
SELMI, Luca
2010-01-01
Abstract
In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
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