Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green’s Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility / Nier, Oliver; D., Rideau; Y. M., Niquet; F., Monsieur; V. H., Nguyen; F., Triozon; A., Cros; R., Clerc; J. C., Barbé; Palestri, Pierpaolo; Esseni, David; I., Duchemin; L., Smith; L., Silvestri; F., Nallet; C., Tavernier; H., Jaouen; Selmi, Luca. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1569-8025. - STAMPA. - 12:4(2013), pp. 675-684. [10.1007/s10825-013-0532-1]

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

PALESTRI, Pierpaolo;SELMI, Luca
2013

Abstract

Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green’s Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.
2013
12
4
675
684
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility / Nier, Oliver; D., Rideau; Y. M., Niquet; F., Monsieur; V. H., Nguyen; F., Triozon; A., Cros; R., Clerc; J. C., Barbé; Palestri, Pierpaolo; Esseni, David; I., Duchemin; L., Smith; L., Silvestri; F., Nallet; C., Tavernier; H., Jaouen; Selmi, Luca. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1569-8025. - STAMPA. - 12:4(2013), pp. 675-684. [10.1007/s10825-013-0532-1]
Nier, Oliver; D., Rideau; Y. M., Niquet; F., Monsieur; V. H., Nguyen; F., Triozon; A., Cros; R., Clerc; J. C., Barbé; Palestri, Pierpaolo; Esseni, David; I., Duchemin; L., Smith; L., Silvestri; F., Nallet; C., Tavernier; H., Jaouen; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163300
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