The Graphene Base Transistor (GBT) is a very promising device concept for analog applications. The device operates similar to the hot electron transistor and exploits the high carrier mobility of graphene to reduce the base resistance that limits the unity power gain frequency (fmax) and the noise figure (NF) of RF devices. Although the DC functionality of the GBT has been experimentally demonstrated, at present RF performance can be investigated by simulations only. In this paper, we predict the DC current and the cutoff frequency of different GBT designs (including dimensions and various materials), with the aim to optimize the GBT structure and to achieve THz operation. In particular, optimized emitter/dielectrics combinations are proposed to maximize RF figures of merit.

Graphene Base Transistors with optimized emitter and dielectrics / Venica, S.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2014), pp. 33-38. (Intervento presentato al convegno 2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014 tenutosi a Opatija, hrv nel 2014 May, 26-30) [10.1109/MIPRO.2014.6859528].

Graphene Base Transistors with optimized emitter and dielectrics

PALESTRI, Pierpaolo;SELMI, Luca
2014

Abstract

The Graphene Base Transistor (GBT) is a very promising device concept for analog applications. The device operates similar to the hot electron transistor and exploits the high carrier mobility of graphene to reduce the base resistance that limits the unity power gain frequency (fmax) and the noise figure (NF) of RF devices. Although the DC functionality of the GBT has been experimentally demonstrated, at present RF performance can be investigated by simulations only. In this paper, we predict the DC current and the cutoff frequency of different GBT designs (including dimensions and various materials), with the aim to optimize the GBT structure and to achieve THz operation. In particular, optimized emitter/dielectrics combinations are proposed to maximize RF figures of merit.
2014
2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014
Opatija, hrv
2014 May, 26-30
33
38
Venica, S.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Graphene Base Transistors with optimized emitter and dielectrics / Venica, S.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2014), pp. 33-38. (Intervento presentato al convegno 2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014 tenutosi a Opatija, hrv nel 2014 May, 26-30) [10.1109/MIPRO.2014.6859528].
File in questo prodotto:
File Dimensione Formato  
MEET_07_2592.pdf

Accesso riservato

Dimensione 939.35 kB
Formato Adobe PDF
939.35 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162986
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 1
social impact