This paper reports a simulation study investigating the drive current of a prototypical SiGe n-type FinFET built on a relaxed SiGe substrate for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose, we performed strain simulations, band-structure calculations, and multisubband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and the scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer, because of the beneficial strain induced by the SiGe substrate. A SiGe channel instead is less performing because of strain relaxation and alloy scattering.

Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel / Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:6(2013), pp. 1884-1891. [10.1109/TED.2013.2258926]

Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel

PALESTRI, Pierpaolo;SELMI, Luca
2013

Abstract

This paper reports a simulation study investigating the drive current of a prototypical SiGe n-type FinFET built on a relaxed SiGe substrate for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose, we performed strain simulations, band-structure calculations, and multisubband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and the scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer, because of the beneficial strain induced by the SiGe substrate. A SiGe channel instead is less performing because of strain relaxation and alloy scattering.
2013
60
6
1884
1891
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel / Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:6(2013), pp. 1884-1891. [10.1109/TED.2013.2258926]
Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162810
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