| Nome |
# |
|
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e31e124e-3a15-987f-e053-3705fe0a095a
|
241
|
|
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection, file e31e124e-7909-987f-e053-3705fe0a095a
|
213
|
|
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells, file e31e124d-5c6a-987f-e053-3705fe0a095a
|
212
|
|
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces, file e31e124d-5d32-987f-e053-3705fe0a095a
|
185
|
|
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs, file e31e124e-90f6-987f-e053-3705fe0a095a
|
139
|
|
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint, file e31e124d-5c67-987f-e053-3705fe0a095a
|
134
|
|
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, file e31e124d-625a-987f-e053-3705fe0a095a
|
134
|
|
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e31e124f-c8a7-987f-e053-3705fe0a095a
|
120
|
|
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e31e124e-88cb-987f-e053-3705fe0a095a
|
97
|
|
Sensitivity, noise and resolution in a beol-modified foundry-made isfet with miniaturized reference electrode for wearable point-of-care applications, file e31e124f-7f21-987f-e053-3705fe0a095a
|
56
|
|
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques, file d8786b59-cb3e-4939-b43f-e45836a277b2
|
52
|
|
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits, file e31e124d-6252-987f-e053-3705fe0a095a
|
50
|
|
Multiphysics Finite-Element Modeling of the Neuron/Electrode Electrodiffusive Interaction, file f286e703-87cb-42aa-ac68-be1c3fdad049
|
31
|
|
A simulation study of FET-based nanoelectrodes for active intracellular neural recordings, file a9ac06ea-e0ab-4739-b7fd-120b92c5441f
|
23
|
|
Accurate Nonlocal Impact Ionization Models for Conventional and Staircase Avalanche Photodiodes derived by Full Band Monte Carlo Transport Simulations, file a298ab47-2fe2-4311-8ca7-a0c63aeed59b
|
17
|
|
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, file 467457de-f8bf-40b5-9f25-e7f035c17454
|
10
|
|
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis, file b957416f-5ccc-4ebe-a76b-8bf82f12718c
|
10
|
|
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K, file 814260d4-f0b1-4384-9d47-65e44f8179c7
|
9
|
|
Can Photon Emission / Absorption Processes Explain the Substrate Current of Tunneling MOS Capacitors?, file e31e124d-6508-987f-e053-3705fe0a095a
|
7
|
|
Multiscale simulation analysis of passive and active micro/nano-electrodes for CMOS-based in-vitro neural sensing devices, file 94581fc5-8dbd-4373-91d8-d5979ae60b11
|
6
|
|
Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects, file f133a370-968e-4f53-beda-4a47d4b31aa3
|
6
|
|
From Finite Element Simulations to Equivalent Circuit Models of Extracellular Neuronal Recording Systems based on Planar and Mushroom Electrodes, file 5978d296-8bb1-481b-9f5d-2bb32b04c843
|
4
|
|
Critical overview and comparison between models for adsorption-desorption noise in bio-chemical sensors, file 891f7eed-957f-4870-afa3-6bd6e4251a11
|
4
|
|
Reproducing capacitive cyclic voltammetric curves by simulation: When are simplified geometries appropriate?, file b2061616-e51c-46cb-a703-bdacd47244c0
|
4
|
|
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains, file c2e7f1ad-5bbb-4bdf-88b2-65cac3ee6743
|
4
|
|
Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e31e124d-674d-987f-e053-3705fe0a095a
|
4
|
|
A Simple Modelling Tool for Fast Combined Simulation of Interconnections, Inter-Symbol Interference and Equalization in High-Speed Serial Interfaces for Chip-to-Chip Communications, file 1b45b1a2-b703-4178-ba87-79ca1b62438f
|
3
|
|
Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection, file 8c5a08d1-eb58-4640-a721-232f2e75332f
|
3
|
|
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ?, file e31e124d-61d9-987f-e053-3705fe0a095a
|
3
|
|
General model for multiple surface reactions in ion-sensitive FETs, file e31e124d-8a1b-987f-e053-3705fe0a095a
|
3
|
|
A review of selected topics in physics based modeling for tunnel field-effect transistors, file f9b16e6e-0c3f-46f7-8bfe-8c23a96f569b
|
3
|
|
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file 0a07c90b-41b9-4969-9c1e-ee501a8b0cb0
|
2
|
|
Mitigation of Electrical/Ionic Interference in Iontronic Neurostimulation/Neurosensing Platforms: A Simulation Study, file 7ce7b6df-de16-427a-8c68-6fdd590409fc
|
2
|
|
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file 83da3b3d-6e9d-4424-967d-8152d489a73f
|
2
|
|
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD, file e31e124d-5b8f-987f-e053-3705fe0a095a
|
2
|
|
Monte Carlo Analysis of Signal Delays in BJTs, file e31e124d-5c5d-987f-e053-3705fe0a095a
|
2
|
|
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes, file e31e124d-673f-987f-e053-3705fe0a095a
|
2
|
|
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves, file e31e124d-8a16-987f-e053-3705fe0a095a
|
2
|
|
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs, file e31e124d-cf2c-987f-e053-3705fe0a095a
|
2
|
|
A Time-Domain Simulation Framework for the Modeling of Jitter in High-Speed Serial Interfaces, file e91eb5c2-e1b2-4cd9-9e81-344538982535
|
2
|
|
null, file 052da0ce-a467-4b64-b467-8f53a77cb6c4
|
1
|
|
Identification of Axon Bendings in Neurons by Multiphysics FEM Simulations of High-Density MEA Extracellular Recordings, file 27e526cb-e251-4d0b-b808-ce01d3132d54
|
1
|
|
Finite-element modeling of neuromodulation via controlled delivery of potassium ions using conductive polymer-coated microelectrodes, file 2f1014b1-248f-47eb-93ac-edfc068e58d4
|
1
|
|
The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization, file 2fb201c5-59e0-4523-a60d-e14c649a93b3
|
1
|
|
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes, file 3f4ce9ce-4cf3-4dfb-ae4d-bbe1c6bb257e
|
1
|
|
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance, file 4636dd98-2787-498e-a922-f79d83489057
|
1
|
|
Selectivity, Sensitivity and Detection Range in Ion-Selective Membrane-based Electrochemical Potentiometric Sensors analyzed with Poisson-Boltzmann equilibrium model, file 893742f2-08f4-49ec-8e87-572a3740a773
|
1
|
|
Design of a 8-taps, 10Gbps transmitter for automotive micro-controllers, file 98155aa3-c1ff-4380-aa12-e8b657657408
|
1
|
|
Small-signal Analysis of Decananometer bulk and SOI MOSFETs for Analog/Mixed-Signal and RF Applications using the Time-Dependent Monte Carlo Approach, file a814ebdf-79b2-451f-bc47-0347455a2995
|
1
|
|
The Monte Carlo approach to transport modeling in decananometer MOSFETs, file caf5d4d2-7b1e-4799-9cba-06b07f763bd7
|
1
|
|
Special Issue of Solid State Electronics Devoted to the 2008 International Conference on Ultimate Integration on Silicon, file e31e124d-6492-987f-e053-3705fe0a095a
|
1
|
|
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier, file e31e124d-649e-987f-e053-3705fe0a095a
|
1
|
|
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks, file e31e124d-6663-987f-e053-3705fe0a095a
|
1
|
|
Improved modeling of Intersymbol Interference in high speed serial lynks, file e31e124d-6758-987f-e053-3705fe0a095a
|
1
|
|
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e31e124e-3a16-987f-e053-3705fe0a095a
|
1
|
|
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys, file e31e124e-3a18-987f-e053-3705fe0a095a
|
1
|
|
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs, file e31e124e-4f02-987f-e053-3705fe0a095a
|
1
|
|
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K, file e81312e3-40c8-4748-a669-0aea80c1cb9d
|
1
|
|
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study, file f71e9d5e-7c78-47b0-957f-c8a0fa476ff1
|
1
|
|
LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology, file f73c78bd-9d04-4244-af30-8ade40fbcc3b
|
1
|
|
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study, file fb6ed625-a01c-4d9e-b34f-f17c27bcba28
|
1
|
| Totale |
1.826 |
