SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 33.289
EU - Europa 9.372
AS - Asia 3.294
SA - Sud America 34
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 20
AF - Africa 13
Totale 46.044
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Nazione #
US - Stati Uniti d'America 33.240
GB - Regno Unito 3.887
HK - Hong Kong 1.441
DE - Germania 1.384
UA - Ucraina 1.128
CN - Cina 955
IT - Italia 794
SE - Svezia 719
TR - Turchia 682
BG - Bulgaria 428
IE - Irlanda 316
FI - Finlandia 164
FR - Francia 152
RU - Federazione Russa 92
NL - Olanda 66
IN - India 57
CH - Svizzera 54
CA - Canada 46
AT - Austria 41
BE - Belgio 37
JP - Giappone 35
KR - Corea 30
TW - Taiwan 22
BR - Brasile 21
GR - Grecia 17
AU - Australia 16
RO - Romania 14
IR - Iran 13
PT - Portogallo 13
A2 - ???statistics.table.value.countryCode.A2??? 12
ES - Italia 12
NO - Norvegia 12
SG - Singapore 12
DK - Danimarca 10
MY - Malesia 10
VN - Vietnam 9
EU - Europa 8
BD - Bangladesh 6
HR - Croazia 6
NZ - Nuova Zelanda 6
CL - Cile 5
CZ - Repubblica Ceca 5
IL - Israele 5
PE - Perù 5
PL - Polonia 5
DZ - Algeria 4
IQ - Iraq 4
MK - Macedonia 4
TN - Tunisia 4
EG - Egitto 3
MD - Moldavia 3
AE - Emirati Arabi Uniti 2
EE - Estonia 2
HU - Ungheria 2
ID - Indonesia 2
MA - Marocco 2
MX - Messico 2
SA - Arabia Saudita 2
AR - Argentina 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
JO - Giordania 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 46.044
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Città #
Fairfield 6.414
Southend 3.389
Ashburn 3.303
Woodbridge 2.754
Seattle 2.415
Houston 2.256
Dearborn 2.112
Chandler 2.043
Cambridge 2.028
Wilmington 1.912
Jacksonville 1.833
Hong Kong 1.427
Ann Arbor 901
Izmir 669
Nyköping 516
San Diego 467
Princeton 432
Sofia 428
Eugene 415
Beijing 365
Dublin 309
Washington 182
Modena 168
New York 166
Helsinki 154
London 153
Bremen 122
Falls Church 104
Nanjing 87
Norwalk 79
Hefei 59
Boardman 57
Kunming 57
Milan 47
Kilburn 43
Jinan 40
Redwood City 40
Zurich 40
Udine 39
Bologna 37
Guangzhou 32
Chiswick 30
Hounslow 28
Véry 27
Nanchang 26
Munich 25
Prescot 23
Fuzhou 22
Ottawa 22
San Francisco 21
Chicago 20
Parma 20
Brussels 18
Stanford 17
Toronto 17
Enschede 16
Orsay 16
Paris 16
Hebei 15
Grafing 14
Reggio Emilia 14
Shanghai 14
Southwark 14
Taipei 14
Tokyo 14
Trieste 14
Baotou 13
Delft 12
Des Moines 12
Providence 12
Vienna 12
Amsterdam 11
Hangzhou 11
Clearwater 10
Shenyang 10
São Paulo 10
Chengdu 9
Florence 9
Verona 9
Dong Ket 8
Lappeenranta 8
Ravenna 8
Rome 8
Turin 8
Acton 7
Changsha 7
Nanning 7
Padova 7
Pune 7
Redmond 7
Singapore 7
Wandsworth 7
Bomporto 6
Chongqing 6
Gif-sur-yvette 6
Hengelo 6
Heverlee 6
Kalyani 6
Kuala Lumpur 6
Serra 6
Totale 38.855
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Nome #
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 233
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 211
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 203
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 198
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 184
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 182
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 180
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 179
Impact of carrier heating on backscattering in inversion layers 174
Impact Ionization and Photon Emission in MOS Capacitors and FETs 173
Relationship between capacitance and conductance in MOS capacitors 169
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 165
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 164
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 163
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 163
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 163
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 161
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 161
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 159
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 158
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 157
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 157
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 156
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 156
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 156
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 155
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 155
On the electron mobility enhancement in biaxially strained Si MOSFETs 154
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 154
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 153
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 152
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 152
Well-tempered MOSFETs: 1D versus 2D quantum analysis 151
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 151
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 151
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 151
A design methodology for MOS Current-Mode Logic Frequency Dividers 151
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 151
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 150
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 149
A novel method to determine the Source and Drain resistances of individual MOSFETs 148
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 148
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 147
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 147
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 146
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 146
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 145
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 144
ENBIOS-1D Lab 143
Tunneling path impact on semi-classical numerical simulations of TFET devices 143
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 143
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 143
Device simulation for decananometer MOSFETs 143
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 142
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 142
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 142
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 142
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 142
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 142
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 142
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 141
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 141
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 141
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits 140
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 140
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 140
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 140
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 139
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 139
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 139
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 138
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 138
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 138
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 138
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 138
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 138
Modeling electrostatic doping and series resistance in graphene-FETs 137
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 137
On the Apparent Mobility in Nanometric n-MOSFETs 137
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 137
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 137
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 137
Simulation of DC and RF Performance of the Graphene Base Transistor 136
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 136
Latch-up in CMOS circuits: a review 136
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements 135
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 135
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 135
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 135
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 135
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 135
Graphene Base Transistors with optimized emitter and dielectrics 134
Semi-analytic Modeling for Hot Carriers in Electron Devices 134
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 134
ENBIOS-2D Lab 133
On the experimental determination of channel back-scattering in nanoMOSFETs 133
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 133
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 133
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 133
Totale 14.973
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Categoria #
all - tutte 194.517
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 194.517
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20194.095 0 0 0 0 0 0 0 0 0 588 1.689 1.818
2019/202012.963 894 337 248 835 1.588 2.412 2.429 1.380 1.210 480 829 321
2020/202110.971 1.132 554 987 857 894 808 1.014 1.652 422 1.602 504 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.214 192 303 188 520 1.322 674 404 482 58 71 0 0
Totale 46.688