SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 37.249
EU - Europa 10.218
AS - Asia 5.471
SA - Sud America 35
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 20
AF - Africa 14
Totale 53.030
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Nazione #
US - Stati Uniti d'America 37.198
GB - Regno Unito 3.893
SG - Singapore 1.743
HK - Hong Kong 1.449
DE - Germania 1.411
CN - Cina 1.294
UA - Ucraina 1.128
IT - Italia 1.034
SE - Svezia 806
TR - Turchia 682
RU - Federazione Russa 460
BG - Bulgaria 428
IE - Irlanda 316
FI - Finlandia 191
FR - Francia 160
NL - Olanda 80
IN - India 72
CH - Svizzera 62
ID - Indonesia 54
CA - Canada 47
AT - Austria 45
BE - Belgio 44
JP - Giappone 44
KR - Corea 37
LT - Lituania 34
TW - Taiwan 34
BR - Brasile 21
GR - Grecia 18
AU - Australia 17
NO - Norvegia 15
ES - Italia 14
RO - Romania 14
IR - Iran 13
PT - Portogallo 13
A2 - ???statistics.table.value.countryCode.A2??? 12
DK - Danimarca 11
MY - Malesia 11
CZ - Repubblica Ceca 10
VN - Vietnam 10
EU - Europa 8
BD - Bangladesh 6
HR - Croazia 6
IL - Israele 6
NZ - Nuova Zelanda 6
CL - Cile 5
DZ - Algeria 5
PE - Perù 5
PL - Polonia 5
IQ - Iraq 4
MK - Macedonia 4
TN - Tunisia 4
EE - Estonia 3
EG - Egitto 3
MD - Moldavia 3
AE - Emirati Arabi Uniti 2
AR - Argentina 2
HU - Ungheria 2
MA - Marocco 2
MX - Messico 2
PA - Panama 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
JO - Giordania 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
LV - Lettonia 1
NP - Nepal 1
PH - Filippine 1
RS - Serbia 1
SI - Slovenia 1
TH - Thailandia 1
UZ - Uzbekistan 1
Totale 53.030
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Città #
Fairfield 6.414
Santa Clara 3.744
Southend 3.389
Ashburn 3.343
Woodbridge 2.754
Seattle 2.415
Houston 2.256
Dearborn 2.112
Chandler 2.044
Cambridge 2.028
Wilmington 1.912
Jacksonville 1.833
Singapore 1.523
Hong Kong 1.435
Ann Arbor 901
Izmir 669
Nyköping 516
San Diego 467
Princeton 432
Sofia 428
Eugene 415
Beijing 384
Dublin 309
Modena 211
Moscow 206
Washington 183
Helsinki 171
New York 167
London 153
Bremen 122
Falls Church 104
Nanjing 92
Norwalk 79
Boardman 64
Bologna 64
Kunming 64
Milan 61
Hefei 59
Guangzhou 53
Jakarta 51
Shanghai 50
Reggio Emilia 46
Zurich 44
Kilburn 43
Udine 42
Jinan 41
Redwood City 40
Chiswick 30
Hounslow 28
Véry 27
Nanchang 26
Munich 25
Chicago 24
Dallas 23
Prescot 23
Fuzhou 22
Ottawa 22
San Francisco 21
Parma 20
Brussels 18
Lappeenranta 18
Paris 18
Toronto 18
Amsterdam 17
Enschede 17
Stanford 17
Tokyo 17
Frankfurt am Main 16
Orsay 16
Hebei 15
Los Angeles 15
Grafing 14
Kaohsiung City 14
Southwark 14
Taipei 14
Trieste 14
Baotou 13
Florence 13
Delft 12
Des Moines 12
Hangzhou 12
Providence 12
Rome 12
Shenyang 12
Vienna 12
Chengdu 11
Changsha 10
Clearwater 10
São Paulo 10
Verona 10
Dong Ket 8
Padova 8
Ravenna 8
Turin 8
Wuhan 8
Zhengzhou 8
Acton 7
Chongqing 7
Kuala Lumpur 7
Nanning 7
Totale 44.733
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Nome #
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 252
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 232
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 223
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 221
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 206
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 202
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 200
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 197
Impact Ionization and Photon Emission in MOS Capacitors and FETs 192
Impact of carrier heating on backscattering in inversion layers 191
Relationship between capacitance and conductance in MOS capacitors 187
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 186
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 186
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 185
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 185
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 182
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 181
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 180
ENBIOS-1D Lab 178
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 178
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 177
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 177
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 177
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 177
ENBIOS-2D Lab 175
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 175
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 175
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 175
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 175
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 175
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 174
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 174
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 173
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 173
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 173
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 172
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 172
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 171
On the electron mobility enhancement in biaxially strained Si MOSFETs 171
Well-tempered MOSFETs: 1D versus 2D quantum analysis 170
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 169
A design methodology for MOS Current-Mode Logic Frequency Dividers 169
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 168
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 167
A novel method to determine the Source and Drain resistances of individual MOSFETs 164
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 164
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 164
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 164
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 164
Tunneling path impact on semi-classical numerical simulations of TFET devices 163
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 163
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 163
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 162
Device simulation for decananometer MOSFETs 162
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 161
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 161
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 161
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 160
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 160
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 160
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 159
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits 159
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 159
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 159
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 158
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 158
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 157
Latch-up in CMOS circuits: a review 157
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 157
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 157
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 157
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 157
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 156
Modeling electrostatic doping and series resistance in graphene-FETs 155
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 155
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs 155
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 155
Simulation of DC and RF Performance of the Graphene Base Transistor 154
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 154
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 154
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 154
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 154
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 154
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 154
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 154
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 153
On the Apparent Mobility in Nanometric n-MOSFETs 153
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 153
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 153
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 153
Long term charge retention dynamics of SONOS cells 153
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 153
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 152
Effects of electrical stress and ionizing radiation on Si-based TFETs 152
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 152
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 152
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 152
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 151
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 151
Graphene Base Transistors with optimized emitter and dielectrics 151
Totale 16.880
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Categoria #
all - tutte 240.777
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 240.777
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20209.061 0 0 0 0 0 2.412 2.429 1.380 1.210 480 829 321
2020/202110.971 1.132 554 987 857 894 808 1.014 1.652 422 1.602 504 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/20256.511 609 139 136 930 2.752 1.945 0 0 0 0 0 0
Totale 53.684