SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 31324
EU - Europa 8485
AS - Asia 1714
SA - Sud America 34
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 18
AF - Africa 11
Totale 41606
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Nazione #
US - Stati Uniti d'America 31278
GB - Regno Unito 3689
DE - Germania 1351
UA - Ucraina 1134
CN - Cina 848
SE - Svezia 702
TR - Turchia 689
IT - Italia 609
BG - Bulgaria 430
FR - Francia 131
RU - Federazione Russa 87
NL - Olanda 50
CH - Svizzera 49
CA - Canada 45
IE - Irlanda 44
AT - Austria 41
BE - Belgio 38
IN - India 36
JP - Giappone 30
FI - Finlandia 27
KR - Corea 26
BR - Brasile 21
GR - Grecia 17
TW - Taiwan 15
AU - Australia 14
HK - Hong Kong 14
RO - Romania 14
PT - Portogallo 13
A2 - ???statistics.table.value.countryCode.A2??? 12
ES - Italia 12
IR - Iran 12
DK - Danimarca 10
NO - Norvegia 10
MY - Malesia 9
EU - Europa 8
VN - Vietnam 8
SG - Singapore 7
CL - Cile 5
CZ - Repubblica Ceca 5
HR - Croazia 5
PE - Perù 5
PL - Polonia 5
IQ - Iraq 4
NZ - Nuova Zelanda 4
TN - Tunisia 4
BD - Bangladesh 3
EG - Egitto 3
MD - Moldavia 3
AE - Emirati Arabi Uniti 2
DZ - Algeria 2
EE - Estonia 2
HU - Ungheria 2
IL - Israele 2
MA - Marocco 2
SA - Arabia Saudita 2
AR - Argentina 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
ID - Indonesia 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 41606
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Città #
Fairfield 6432
Southend 3418
Woodbridge 2763
Ashburn 2472
Seattle 2414
Houston 2260
Dearborn 2119
Chandler 2071
Cambridge 2033
Wilmington 1920
Jacksonville 1847
Ann Arbor 903
Izmir 676
Nyköping 500
San Diego 467
Princeton 435
Sofia 430
Eugene 419
Beijing 305
Modena 149
Bremen 124
London 122
Falls Church 104
Nanjing 85
Norwalk 79
Hefei 61
Kunming 57
Boardman 56
Jinan 41
Redwood City 40
Zurich 39
Dublin 38
Udine 37
Guangzhou 32
Nanchang 27
Véry 27
Helsinki 25
Brussels 22
Fuzhou 22
Milan 22
Ottawa 22
Munich 21
San Francisco 21
Chicago 20
Bologna 18
Stanford 17
Toronto 17
Orsay 16
Enschede 15
Grafing 15
Hebei 15
Parma 15
Taipei 14
Trieste 14
Baotou 13
Shanghai 13
Des Moines 12
Providence 12
Vienna 12
Hangzhou 11
Tokyo 11
Clearwater 10
Shenyang 10
São Paulo 10
Chengdu 9
Dong Ket 8
Ravenna 8
Changsha 7
Nanning 7
Redmond 7
Chongqing 6
Gif-sur-yvette 6
Hengelo 6
Heverlee 6
Kalyani 6
Kuala Lumpur 6
Padova 6
Serra 6
Shaoxing 6
Verona 6
Wuhan 6
Amsterdam 5
Athens 5
Graz 5
Groningen 5
Kish 5
Lima 5
Los Angeles 5
New York 5
Ruvo Di Puglia 5
Saint Louis 5
San Michele All'adige 5
Seongnam 5
Seoul 5
Suita 5
Taiyuan 5
Torre Del Greco 5
Wenzhou 5
Xian 5
Zagreb 5
Totale 35654
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Nome #
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 215
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 196
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 181
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 172
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 171
Impact Ionization and Photon Emission in MOS Capacitors and FETs 169
Impact of carrier heating on backscattering in inversion layers 166
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 165
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 165
Relationship between capacitance and conductance in MOS capacitors 159
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 155
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 155
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 154
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 154
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 151
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 150
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 150
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 148
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 147
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 147
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 146
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 145
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 144
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 144
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 143
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 143
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 142
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 142
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 142
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 142
A novel method to determine the Source and Drain resistances of individual MOSFETs 141
Well-tempered MOSFETs: 1D versus 2D quantum analysis 141
On the electron mobility enhancement in biaxially strained Si MOSFETs 141
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 141
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 141
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 141
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 139
Device simulation for decananometer MOSFETs 139
A design methodology for MOS Current-Mode Logic Frequency Dividers 139
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 137
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 137
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 136
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 136
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 136
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 136
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 135
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 135
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 135
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 135
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 135
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 134
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 133
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 133
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 132
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 132
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 132
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 131
Tunneling path impact on semi-classical numerical simulations of TFET devices 131
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 130
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 129
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 129
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 129
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 129
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 129
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 129
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 128
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 128
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 128
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 128
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 128
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 128
Modeling electrostatic doping and series resistance in graphene-FETs 127
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 127
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 127
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 127
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 127
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 126
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 126
Simulation of DC and RF Performance of the Graphene Base Transistor 125
On the Apparent Mobility in Nanometric n-MOSFETs 125
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 125
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 125
Latch-up in CMOS circuits: a review 125
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 125
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 124
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 124
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 124
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 124
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 124
Graphene Base Transistors with optimized emitter and dielectrics 124
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 124
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 124
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 123
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 123
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits 123
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 123
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 123
On the experimental determination of channel back-scattering in nanoMOSFETs 122
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 122
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements 122
Totale 13799
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Categoria #
all - tutte 82893
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 82893
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/2018433 0000 00 00 002431
2018/20196159 762929431 401441 50429 11158816941826
2019/202013012 896339249838 15942417 24401386 1214481834324
2020/202111016 1139555992858 901813 10171659 4221610504546
2021/20226850 2931035904180 124327 403342 7815731275613
2022/20234753 645421310413 803776 82543 760000
Totale 42230