SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 53.098
AS - Asia 18.558
EU - Europa 15.742
SA - Sud America 2.366
Continente sconosciuto - Info sul continente non disponibili 702
AF - Africa 319
OC - Oceania 34
Totale 90.819
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Nazione #
US - Stati Uniti d'America 52.403
SG - Singapore 5.488
GB - Regno Unito 4.975
CN - Cina 4.054
HK - Hong Kong 3.488
IT - Italia 2.335
VN - Vietnam 2.037
BR - Brasile 1.886
DE - Germania 1.609
PL - Polonia 1.349
UA - Ucraina 1.200
SE - Svezia 938
BD - Bangladesh 764
TR - Turchia 736
RU - Federazione Russa 705
FR - Francia 639
KR - Corea 616
BG - Bulgaria 439
FI - Finlandia 373
CA - Canada 347
IN - India 333
IE - Irlanda 331
NL - Olanda 279
JP - Giappone 158
AR - Argentina 157
MX - Messico 129
IQ - Iraq 120
ID - Indonesia 115
TW - Taiwan 98
AT - Austria 93
ZA - Sudafrica 81
AE - Emirati Arabi Uniti 77
ES - Italia 77
EC - Ecuador 74
CH - Svizzera 70
PK - Pakistan 69
CO - Colombia 66
BE - Belgio 62
PH - Filippine 53
CR - Costa Rica 52
CL - Cile 47
MA - Marocco 45
VE - Venezuela 45
LT - Lituania 44
SA - Arabia Saudita 44
JM - Giamaica 41
MY - Malesia 41
EG - Egitto 37
DZ - Algeria 35
JO - Giordania 35
UZ - Uzbekistan 33
NP - Nepal 32
PY - Paraguay 32
RO - Romania 30
TN - Tunisia 29
AU - Australia 28
TH - Thailandia 26
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 24
HN - Honduras 23
UY - Uruguay 22
PE - Perù 20
NO - Norvegia 17
CZ - Repubblica Ceca 16
IR - Iran 16
BO - Bolivia 15
DK - Danimarca 15
OM - Oman 15
TT - Trinidad e Tobago 15
KZ - Kazakistan 14
PR - Porto Rico 14
RS - Serbia 13
A2 - ???statistics.table.value.countryCode.A2??? 12
GT - Guatemala 12
IL - Israele 12
NI - Nicaragua 12
AL - Albania 11
DO - Repubblica Dominicana 10
LB - Libano 10
SK - Slovacchia (Repubblica Slovacca) 10
AZ - Azerbaigian 9
BB - Barbados 9
BY - Bielorussia 9
CI - Costa d'Avorio 9
PA - Panama 9
BH - Bahrain 8
ET - Etiopia 8
EU - Europa 8
HR - Croazia 8
MD - Moldavia 8
QA - Qatar 8
CY - Cipro 7
EE - Estonia 7
MK - Macedonia 7
XK - ???statistics.table.value.countryCode.XK??? 7
GE - Georgia 6
HU - Ungheria 6
KG - Kirghizistan 6
NZ - Nuova Zelanda 6
Totale 90.021
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Città #
Fairfield 6.416
Ashburn 6.271
Santa Clara 4.004
Singapore 3.883
Hong Kong 3.430
Southend 3.389
Woodbridge 2.755
Seattle 2.442
San Jose 2.352
Houston 2.305
Dearborn 2.112
Chandler 2.044
Cambridge 2.030
Wilmington 1.947
Jacksonville 1.852
Warsaw 1.332
Council Bluffs 1.235
London 1.103
Hefei 941
Ann Arbor 901
Beijing 762
Izmir 670
Chicago 642
Los Angeles 625
Ho Chi Minh City 620
The Dalles 601
Seoul 551
Hanoi 530
Nyköping 516
San Diego 478
Princeton 432
Milan 431
Sofia 431
Eugene 417
New York 401
Lauterbourg 352
Helsinki 335
Dublin 323
Modena 282
Buffalo 237
Moscow 231
Washington 228
Dallas 210
Salt Lake City 210
São Paulo 161
Redondo Beach 150
Amsterdam 149
Shanghai 138
Atlanta 131
Frankfurt am Main 131
Bremen 122
Tampa 119
Da Nang 115
Bologna 112
Falls Church 106
Phoenix 101
Tokyo 101
Nanjing 98
Elk Grove Village 85
Boardman 83
Brooklyn 83
Toronto 83
Miano 82
Norwalk 80
Guangzhou 76
Columbus 75
San Francisco 75
Rio de Janeiro 74
Orem 72
Haiphong 71
Rome 67
Kunming 64
Jakarta 63
Brantford 57
Miami 55
Denver 51
Kent 51
Reggio Emilia 51
Chennai 49
Zurich 49
Taipei 48
Nuremberg 47
Jinan 46
Montreal 45
Philadelphia 45
Udine 44
Kilburn 43
Belo Horizonte 41
Boston 40
Redwood City 40
Baghdad 39
Charlotte 39
San José 39
Mexico City 37
Changsha 36
Detroit 36
Las Vegas 36
Munich 36
Vienna 36
Naples 35
Totale 67.297
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 635
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 489
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 486
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 467
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 439
ENBIOS-1D Lab 407
ENBIOS-2D Lab 398
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 390
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 379
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 374
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 332
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 326
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 322
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 322
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 318
Impact Ionization and Photon Emission in MOS Capacitors and FETs 316
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 313
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 309
A design methodology for MOS Current-Mode Logic Frequency Dividers 309
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 306
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 303
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 303
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 300
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 299
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 299
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 298
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 297
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 295
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 288
Well-tempered MOSFETs: 1D versus 2D quantum analysis 287
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 285
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 283
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 282
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 280
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 278
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 277
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 277
Simulation of DC and RF Performance of the Graphene Base Transistor 275
Device simulation for decananometer MOSFETs 275
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 274
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 273
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 272
Relationship between capacitance and conductance in MOS capacitors 272
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 269
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 269
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 268
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 266
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 266
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 262
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 261
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 261
Impact of carrier heating on backscattering in inversion layers 258
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 257
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 257
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 256
A better understanding of the low-field mobility in Graphene Nano-ribbons 256
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 255
General model for multiple surface reactions in ion-sensitive FETs 255
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 252
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 251
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 250
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 250
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 248
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 247
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 245
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 245
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 245
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 244
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 244
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 244
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 244
Tunneling path impact on semi-classical numerical simulations of TFET devices 243
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 242
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 242
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 242
On the electron mobility enhancement in biaxially strained Si MOSFETs 241
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 241
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 241
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 240
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 239
A novel method to determine the Source and Drain resistances of individual MOSFETs 239
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 239
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 238
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 238
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 238
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 236
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 235
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 235
Effects of electrical stress and ionizing radiation on Si-based TFETs 234
On the design of LDMOS finFETs in advanced technology nodes 233
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 233
Latch-up in CMOS circuits: a review 233
Tunnelling Injection in Thin Oxide MOS Capacitors 232
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 232
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 231
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 231
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 231
Long term charge retention dynamics of SONOS cells 230
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 229
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 229
Totale 28.181
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Categoria #
all - tutte 374.966
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 374.966
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.488 0 0 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202624.308 970 577 1.757 1.606 3.124 3.927 3.742 1.091 1.875 1.978 2.371 1.290
2026/20275.434 1.423 1.790 2.221 0 0 0 0 0 0 0 0 0
Totale 90.819