SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 33.338
EU - Europa 9.570
AS - Asia 4.178
SA - Sud America 34
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 20
AF - Africa 13
Totale 47.175
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Nazione #
US - Stati Uniti d'America 33.289
GB - Regno Unito 3.890
HK - Hong Kong 1.441
DE - Germania 1.403
UA - Ucraina 1.128
CN - Cina 1.072
IT - Italia 879
SE - Svezia 748
SG - Singapore 736
TR - Turchia 682
BG - Bulgaria 428
IE - Irlanda 316
FI - Finlandia 172
FR - Francia 155
RU - Federazione Russa 92
NL - Olanda 70
IN - India 59
CH - Svizzera 56
CA - Canada 46
AT - Austria 43
JP - Giappone 41
BE - Belgio 40
LT - Lituania 34
KR - Corea 31
TW - Taiwan 31
ID - Indonesia 27
BR - Brasile 21
GR - Grecia 17
AU - Australia 16
RO - Romania 14
IR - Iran 13
NO - Norvegia 13
PT - Portogallo 13
A2 - ???statistics.table.value.countryCode.A2??? 12
ES - Italia 12
CZ - Repubblica Ceca 10
DK - Danimarca 10
MY - Malesia 10
VN - Vietnam 9
EU - Europa 8
BD - Bangladesh 6
HR - Croazia 6
NZ - Nuova Zelanda 6
CL - Cile 5
IL - Israele 5
PE - Perù 5
PL - Polonia 5
DZ - Algeria 4
IQ - Iraq 4
MK - Macedonia 4
TN - Tunisia 4
EG - Egitto 3
MD - Moldavia 3
AE - Emirati Arabi Uniti 2
EE - Estonia 2
HU - Ungheria 2
MA - Marocco 2
MX - Messico 2
SA - Arabia Saudita 2
AR - Argentina 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
EC - Ecuador 1
FK - Isole Falkland (Malvinas) 1
JO - Giordania 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
NP - Nepal 1
PA - Panama 1
PH - Filippine 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 47.175
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Città #
Fairfield 6.414
Southend 3.389
Ashburn 3.313
Woodbridge 2.754
Seattle 2.415
Houston 2.256
Dearborn 2.112
Chandler 2.043
Cambridge 2.028
Wilmington 1.912
Jacksonville 1.833
Hong Kong 1.427
Ann Arbor 901
Izmir 669
Singapore 563
Nyköping 516
San Diego 467
Princeton 432
Sofia 428
Eugene 415
Beijing 375
Dublin 309
Modena 190
Washington 183
New York 166
Helsinki 156
London 153
Bremen 122
Falls Church 104
Nanjing 88
Norwalk 79
Boardman 64
Hefei 59
Kunming 57
Bologna 50
Milan 49
Kilburn 43
Shanghai 42
Guangzhou 40
Jinan 40
Redwood City 40
Zurich 40
Udine 39
Chiswick 30
Hounslow 28
Reggio Emilia 27
Véry 27
Nanchang 26
Jakarta 25
Munich 25
Chicago 23
Prescot 23
Fuzhou 22
Ottawa 22
San Francisco 21
Parma 20
Brussels 18
Stanford 17
Toronto 17
Enschede 16
Orsay 16
Paris 16
Frankfurt am Main 15
Hebei 15
Grafing 14
Kaohsiung City 14
Lappeenranta 14
Southwark 14
Taipei 14
Tokyo 14
Trieste 14
Amsterdam 13
Baotou 13
Florence 13
Delft 12
Des Moines 12
Hangzhou 12
Providence 12
Rome 12
Vienna 12
Chengdu 10
Clearwater 10
Shenyang 10
São Paulo 10
Verona 10
Los Angeles 9
Dong Ket 8
Ravenna 8
Turin 8
Acton 7
Changsha 7
Nanning 7
Padova 7
Pune 7
Redmond 7
Wandsworth 7
Bomporto 6
Chongqing 6
Gif-sur-yvette 6
Hengelo 6
Totale 39.589
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Nome #
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 235
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 213
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 206
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 204
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 190
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 185
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 182
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 181
Impact of carrier heating on backscattering in inversion layers 178
Impact Ionization and Photon Emission in MOS Capacitors and FETs 177
Relationship between capacitance and conductance in MOS capacitors 172
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 168
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 167
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 167
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 166
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 166
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 164
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 163
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 162
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 160
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 160
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 160
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 160
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 158
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 158
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 157
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 157
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 157
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 157
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 156
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 156
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 155
On the electron mobility enhancement in biaxially strained Si MOSFETs 155
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 155
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 155
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 155
Well-tempered MOSFETs: 1D versus 2D quantum analysis 154
A design methodology for MOS Current-Mode Logic Frequency Dividers 154
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 152
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 152
A novel method to determine the Source and Drain resistances of individual MOSFETs 150
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 150
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 150
ENBIOS-1D Lab 149
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 149
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 148
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 148
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 148
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 148
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 147
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 146
Tunneling path impact on semi-classical numerical simulations of TFET devices 146
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 146
Device simulation for decananometer MOSFETs 146
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 146
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 145
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 144
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 144
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 144
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 144
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 144
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 144
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 144
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 144
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 143
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 143
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 142
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 142
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits 141
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 141
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 140
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 140
ENBIOS-2D Lab 140
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 140
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 140
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 140
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 140
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 140
Modeling electrostatic doping and series resistance in graphene-FETs 139
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 139
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 139
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 139
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 138
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 138
Latch-up in CMOS circuits: a review 138
Simulation of DC and RF Performance of the Graphene Base Transistor 137
On the Apparent Mobility in Nanometric n-MOSFETs 137
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 137
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 137
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 137
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 137
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements 136
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 136
Graphene Base Transistors with optimized emitter and dielectrics 136
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 136
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 136
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 136
On the experimental determination of channel back-scattering in nanoMOSFETs 135
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 135
Parameter extraction from I-V characteristics of single MOSFETs 135
Totale 15.228
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Categoria #
all - tutte 213.525
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 213.525
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202012.069 0 337 248 835 1.588 2.412 2.429 1.380 1.210 480 829 321
2020/202110.971 1.132 554 987 857 894 808 1.014 1.652 422 1.602 504 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/2025647 609 38 0 0 0 0 0 0 0 0 0 0
Totale 47.820