SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 1206
EU - Europa 376
AS - Asia 173
AF - Africa 14
OC - Oceania 2
SA - Sud America 2
Totale 1773
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Nazione #
US - Stati Uniti d'America 1178
IT - Italia 136
NL - Olanda 54
CN - Cina 43
SE - Svezia 39
IN - India 33
CA - Canada 27
DE - Germania 25
GB - Regno Unito 25
FR - Francia 22
JP - Giappone 20
CH - Svizzera 19
IR - Iran 15
HK - Hong Kong 13
CZ - Repubblica Ceca 12
TW - Taiwan 11
BE - Belgio 10
MY - Malesia 10
VN - Vietnam 8
IE - Irlanda 7
DZ - Algeria 6
RU - Federazione Russa 5
EG - Egitto 4
ES - Italia 4
GR - Grecia 4
PK - Pakistan 4
TN - Tunisia 4
TR - Turchia 4
BD - Bangladesh 3
KR - Corea 3
PT - Portogallo 3
SG - Singapore 3
AU - Australia 2
HR - Croazia 2
ID - Indonesia 2
LT - Lituania 2
RO - Romania 2
AT - Austria 1
EC - Ecuador 1
FI - Finlandia 1
IL - Israele 1
PL - Polonia 1
SI - Slovenia 1
TT - Trinidad e Tobago 1
UA - Ucraina 1
VE - Venezuela 1
Totale 1773
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Città #
Fairfield 188
Houston 132
Woodbridge 93
Santa Cruz 92
Seattle 79
Ashburn 73
Cambridge 65
Wilmington 56
Modena 52
Ann Arbor 50
Des Moines 34
San Diego 32
Stockholm 31
Buffalo 23
Zurich 19
Parma 18
Toronto 18
Beijing 13
Enschede 13
Boardman 12
Central 10
Taipei 10
Bremen 9
Dong Ket 8
Las Vegas 8
Bengaluru 7
Dublin 7
Leiden 7
Rijswijk 7
Atlanta 6
Kortenhoef 6
Pittsburgh 6
Bologna 5
Brussels 5
Delhi 5
Fleming Island 5
Los Angeles 5
The Hague 5
Tokyo 5
Trieste 5
Chennai 4
Istanbul 4
Lowell 4
Milan 4
Mountain View 4
Ottawa 4
Padova 4
Pijnacker 4
Albinea 3
Boulder 3
Carbondale 3
Clearwater 3
Delft 3
Fremont 3
Glasgow 3
Henderson 3
Herndon 3
Islamabad 3
Kuala Lumpur 3
Leuven 3
Nanjing 3
North Walsham 3
Oshawa 3
Palo Alto 3
Paris 3
Pasadena 3
Sant'Ilario d'Enza 3
Southend 3
Torino 3
Yokohama 3
Bangalore 2
Bari 2
Berlin 2
Brooklyn 2
Cairo 2
Chengdu 2
Chicago 2
Compiègne 2
Concord 2
Council Bluffs 2
Craiova 2
Genoa 2
George Town 2
Giza 2
Granada 2
Irvine 2
Jinan 2
Karben 2
Kowloon 2
Lake Forest 2
Lier 2
Linköping 2
Malacca 2
Mumbai 2
Nalgonda 2
Nijmegen 2
Nottingham 2
Nîmes 2
Paredes de Coura 2
Provo 2
Totale 1382
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Nome #
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e31e124e-3a15-987f-e053-3705fe0a095a 234
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs, file e31e124f-9855-987f-e053-3705fe0a095a 214
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells, file e31e124d-5c6a-987f-e053-3705fe0a095a 206
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection, file e31e124e-7909-987f-e053-3705fe0a095a 206
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces, file e31e124d-5d32-987f-e053-3705fe0a095a 162
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays, file e31e124d-5cdc-987f-e053-3705fe0a095a 146
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint, file e31e124d-5c67-987f-e053-3705fe0a095a 130
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, file e31e124d-625a-987f-e053-3705fe0a095a 127
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e31e124e-88cb-987f-e053-3705fe0a095a 97
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e31e124f-c8a7-987f-e053-3705fe0a095a 90
Sensitivity, noise and resolution in a beol-modified foundry-made isfet with miniaturized reference electrode for wearable point-of-care applications, file e31e124f-7f21-987f-e053-3705fe0a095a 57
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits, file e31e124d-6252-987f-e053-3705fe0a095a 47
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging, file e31e1250-7928-987f-e053-3705fe0a095a 43
Multiphysics Finite-Element Modeling of the Neuron/Electrode Electrodiffusive Interaction, file f286e703-87cb-42aa-ac68-be1c3fdad049 18
A simulation study of FET-based nanoelectrodes for active intracellular neural recordings, file a9ac06ea-e0ab-4739-b7fd-120b92c5441f 15
Multiscale simulation analysis of passive and active micro/nano-electrodes for CMOS-based in-vitro neural sensing devices, file e31e1250-7f38-987f-e053-3705fe0a095a 9
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes, file e31e124d-8a17-987f-e053-3705fe0a095a 7
Can Photon Emission / Absorption Processes Explain the Substrate Current of Tunneling MOS Capacitors?, file e31e124d-6508-987f-e053-3705fe0a095a 5
Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e31e124d-674d-987f-e053-3705fe0a095a 4
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms, file e31e124d-9636-987f-e053-3705fe0a095a 4
Dependable contact related parameter extraction in graphene-metal junctions, file e31e124e-70f7-987f-e053-3705fe0a095a 4
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ?, file e31e124d-61d9-987f-e053-3705fe0a095a 3
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes, file e31e124d-9eda-987f-e053-3705fe0a095a 2
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs, file e31e124d-cf2c-987f-e053-3705fe0a095a 2
Selectivity, Sensitivity and Detection Range in Ion-Selective Membrane-based Electrochemical Potentiometric Sensors analyzed with Poisson-Boltzmann equilibrium model, file 893742f2-08f4-49ec-8e87-572a3740a773 1
Accurate Nonlocal Impact Ionization Models for Conventional and Staircase Avalanche Photodiodes derived by Full Band Monte Carlo Transport Simulations, file a298ab47-2fe2-4311-8ca7-a0c63aeed59b 1
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks, file e31e124d-6663-987f-e053-3705fe0a095a 1
General model for multiple surface reactions in ion-sensitive FETs, file e31e124d-8a1b-987f-e053-3705fe0a095a 1
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e31e124e-3a16-987f-e053-3705fe0a095a 1
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys, file e31e124e-3a18-987f-e053-3705fe0a095a 1
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs, file e31e124e-4f02-987f-e053-3705fe0a095a 1
Totale 1839
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Categoria #
all - tutte 3372
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3372
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/20186 0000 00 00 0006
2018/201913 0000 00 01 10200
2019/2020126 0021 120 2015 2418196
2020/2021500 22244082 3659 4422 27313875
2021/2022605 59153283 6026 2737 363513461
2022/2023589 407012162 4464 8368 37000
Totale 1839