We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V −1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20nm and 10nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1V were achieved for the GAANW- TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20nm FinFETs.
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs / C., Schulte Braucks; S., Richter; L., Knoll; Selmi, Luca; Q., Zao; S., Mantl. - STAMPA. - (2014), pp. 178-181. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia (Italy) nel 22-26 Settembre 2014) [10.1109/ESSDERC.2014.6948789].
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs
SELMI, Luca;
2014
Abstract
We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V −1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20nm and 10nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1V were achieved for the GAANW- TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20nm FinFETs.
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