This paper investigates the relationship between various HALO parameters best suited to achieve short channel effect control in MOSFETs with channel lengths of ≃0.1 μm. New insights into the HALO control upon threshold voltage have been achieved by means of a simple analytical model. The analysis has been refined through extensive drift diffusion simulations based on a parametric representation of the HALO profile

Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs / Abramo, Antonio; Selmi, Luca; Zanchetta, Sergio; Todon, A; Sangiorgi, Enrico. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 46:3(2002), pp. 429-434.

Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs

ABRAMO, Antonio;SELMI, Luca;
2002-01-01

Abstract

This paper investigates the relationship between various HALO parameters best suited to achieve short channel effect control in MOSFETs with channel lengths of ≃0.1 μm. New insights into the HALO control upon threshold voltage have been achieved by means of a simple analytical model. The analysis has been refined through extensive drift diffusion simulations based on a parametric representation of the HALO profile
46
3
429
434
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs / Abramo, Antonio; Selmi, Luca; Zanchetta, Sergio; Todon, A; Sangiorgi, Enrico. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 46:3(2002), pp. 429-434.
Abramo, Antonio; Selmi, Luca; Zanchetta, Sergio; Todon, A; Sangiorgi, Enrico
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163086
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