ABRAMO, ANTONIO

ABRAMO, ANTONIO  

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Titolo Data di pubblicazione Autore(i) File
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 1-gen-1994 A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 1-gen-2002 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 1-gen-2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 1-gen-2002 Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 1-gen-2002 Abramo, Antonio; Selmi, Luca; Zanchetta, Sergio; Todon, A; Sangiorgi, Enrico
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 1-gen-2003 Palestri, Pierpaolo; Esseni, David; Abramo, Antonio; Clerc, R; Selmi, Luca
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 1-gen-2001 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
Device simulation for decananometer MOSFETs 1-gen-2003 Sangiorgi, Enrico; Palestri, Pierpaolo; Esseni, David; Fiegna, C.; Abramo, Antonio; Selmi, Luca
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 1-gen-2002 Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E.
Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 1-gen-2002 Clerc, R; Palestri, Pierpaolo; Abramo, Antonio
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 1-gen-1999 Todon, A; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 1-gen-2003 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 1-gen-2003 Lucci, Luca; Esseni, David; J., Loo; Y., Ponomarev; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 1-gen-2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 1-gen-2000 A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 1-gen-2002 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors 1-gen-2000 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 1-gen-2000 Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 1-gen-2000 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico