This paper describes the design of a single-stage differential Low Noise Amplifier (LNA) for Ultra Wide Band(UWB) applications, implemented in state of the art Planar and FinFET 45nm CMOS technologies. A gm-boosted topology has been chosen and the LNA has been designed to work over the whole UWB band (3.1 – 10.6GHz), while driving a capacitive load. The simulations highlight that, at the present stage of the technology development, the Planar version of the LNA outperforms the FinFET one thanks to the superior cutoff frequency fT of Planar devices in the inversion region, achieving comparable Noise Figure and voltage gain, but consuming less power.

Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET / D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger. - In: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS PROCEEDINGS. - ISSN 0271-4302. - (2008), pp. 2701-2704. (Intervento presentato al convegno 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 tenutosi a Seattle, WA, usa nel Maggio) [10.1109/ISCAS.2008.4542014].

Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET

PALESTRI, Pierpaolo;SELMI, Luca;
2008

Abstract

This paper describes the design of a single-stage differential Low Noise Amplifier (LNA) for Ultra Wide Band(UWB) applications, implemented in state of the art Planar and FinFET 45nm CMOS technologies. A gm-boosted topology has been chosen and the LNA has been designed to work over the whole UWB band (3.1 – 10.6GHz), while driving a capacitive load. The simulations highlight that, at the present stage of the technology development, the Planar version of the LNA outperforms the FinFET one thanks to the superior cutoff frequency fT of Planar devices in the inversion region, achieving comparable Noise Figure and voltage gain, but consuming less power.
2008
2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Seattle, WA, usa
Maggio
2701
2704
D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET / D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger. - In: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS PROCEEDINGS. - ISSN 0271-4302. - (2008), pp. 2701-2704. (Intervento presentato al convegno 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 tenutosi a Seattle, WA, usa nel Maggio) [10.1109/ISCAS.2008.4542014].
File in questo prodotto:
File Dimensione Formato  
2008_05_ISCAS_Ponton_DesignUWBLNA.pdf

Accesso riservato

Dimensione 301.43 kB
Formato Adobe PDF
301.43 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162811
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact