This work presents a new analytical model for low frequency Charge Pumping measurements on SONOS memory cells. The charge per cycle that recombines into the nitride layer and its frequency dependence allow us to study the spatial distribution of nitride traps. Experimental results agree with reported nitride trap concentrations and show an interface between the nitride and the silicon substrate in good agreement with TEM pictures of the SONOS devices.
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices / Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 80:(2005), pp. 333-336. [10.1016/j.mee.2005.04.087]
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
SELMI, Luca;
2005
Abstract
This work presents a new analytical model for low frequency Charge Pumping measurements on SONOS memory cells. The charge per cycle that recombines into the nitride layer and its frequency dependence allow us to study the spatial distribution of nitride traps. Experimental results agree with reported nitride trap concentrations and show an interface between the nitride and the silicon substrate in good agreement with TEM pictures of the SONOS devices.
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