A novel method is presented to determine the bias-dependent series resistances and intrinsic conductance factor of individual MOSFETs. The parameter-extraction procedure can also be applied to groups of scaled transistors to work out the device effective channel length. The method is derived analytically from the conventional theory of ideal MOSFETs, and the deviations of real devices from such a case are studied using two-dimensional device simulations. Experimental results with n- and p-channel conventional and LDD (lightly doped drain) MOSFETs are presented to demonstrate the correctness of the method
A novel method to determine the Source and Drain resistances of individual MOSFETs / Ricco, B; Selmi, Luca; Sangiorgi, Enrico. - (1988), pp. 122-125. (Intervento presentato al convegno IEDM 1988 tenutosi a San Francisco, CA, USA nel 11-14 Dicembre 1988) [10.1109/IEDM.1988.32768].
A novel method to determine the Source and Drain resistances of individual MOSFETs
SELMI, Luca;
1988
Abstract
A novel method is presented to determine the bias-dependent series resistances and intrinsic conductance factor of individual MOSFETs. The parameter-extraction procedure can also be applied to groups of scaled transistors to work out the device effective channel length. The method is derived analytically from the conventional theory of ideal MOSFETs, and the deviations of real devices from such a case are studied using two-dimensional device simulations. Experimental results with n- and p-channel conventional and LDD (lightly doped drain) MOSFETs are presented to demonstrate the correctness of the method
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