The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation induced degradation in threshold voltage shift and interface traps accumulation.
Effects of electrical stress and ionizing radiation on Si-based TFETs / Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Le Royer, Cyrille. - ELETTRONICO. - (2015), pp. 137-140. (Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) tenutosi a Bologna nel Gennaio 2015) [10.1109/ULIS.2015.7063792].
Effects of electrical stress and ionizing radiation on Si-based TFETs
SELMI, Luca;
2015
Abstract
The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation induced degradation in threshold voltage shift and interface traps accumulation.
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