In part I of this paper, we study the physicochemical structure and the electrical properties of low-pressure-chemical-vapor-deposited silicon nitride (SiN) aimed to serve as storage layers for nonvolatile memory applications. An in-depth material analysis has been carried out together with a comprehensive electrical characterization on two samples fabricated with recipes yielding rather standard SiN and Si-rich SiN. The investigation points out the impact of SiN stoichiometry and hydrogen content on the electrical characteristics of gate stacks designed in view of channel hot-electron/hole-injection program/erase (P/E) operation and tunnel P/E operation. The extensive and detailed characterization establishes a sound experimental basis for the development of the physics-based trap models proposed in the companion paper.

Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations / Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; COLONNA J., P; DE SALVO, B; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:8(2011), pp. 2483-2489. [10.1109/TED.2011.2140116]

Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

SELMI, Luca
2011

Abstract

In part I of this paper, we study the physicochemical structure and the electrical properties of low-pressure-chemical-vapor-deposited silicon nitride (SiN) aimed to serve as storage layers for nonvolatile memory applications. An in-depth material analysis has been carried out together with a comprehensive electrical characterization on two samples fabricated with recipes yielding rather standard SiN and Si-rich SiN. The investigation points out the impact of SiN stoichiometry and hydrogen content on the electrical characteristics of gate stacks designed in view of channel hot-electron/hole-injection program/erase (P/E) operation and tunnel P/E operation. The extensive and detailed characterization establishes a sound experimental basis for the development of the physics-based trap models proposed in the companion paper.
2011
58
8
2483
2489
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations / Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; COLONNA J., P; DE SALVO, B; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:8(2011), pp. 2483-2489. [10.1109/TED.2011.2140116]
Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; COLONNA J., P; DE SALVO, B; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163034
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