VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 22.707
EU - Europa 9.747
AS - Asia 3.093
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 12
SA - Sud America 11
AF - Africa 9
Totale 35.598
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Nazione #
US - Stati Uniti d'America 22.150
GB - Regno Unito 4.046
DE - Germania 1.564
IT - Italia 1.294
SE - Svezia 1.211
CN - Cina 1.080
TR - Turchia 641
UA - Ucraina 579
CA - Canada 553
SG - Singapore 539
HK - Hong Kong 527
FI - Finlandia 317
BG - Bulgaria 248
FR - Francia 159
IN - India 75
IE - Irlanda 68
JP - Giappone 51
RU - Federazione Russa 50
TW - Taiwan 45
NL - Olanda 41
KR - Corea 39
BE - Belgio 35
PT - Portogallo 34
ID - Indonesia 28
MY - Malesia 24
ES - Italia 20
AT - Austria 16
EU - Europa 15
LT - Lituania 14
VN - Vietnam 12
PL - Polonia 11
AU - Australia 10
CH - Svizzera 8
IL - Israele 8
IR - Iran 8
RO - Romania 8
CL - Cile 6
GR - Grecia 5
DK - Danimarca 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AE - Emirati Arabi Uniti 3
BD - Bangladesh 3
BR - Brasile 3
DZ - Algeria 3
MX - Messico 3
PH - Filippine 3
CZ - Repubblica Ceca 2
HR - Croazia 2
HU - Ungheria 2
KZ - Kazakistan 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
TN - Tunisia 2
A1 - Anonimo 1
AL - Albania 1
GE - Georgia 1
IM - Isola di Man 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MA - Marocco 1
MD - Moldavia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
PA - Panama 1
PE - Perù 1
RS - Serbia 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 35.598
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Città #
Fairfield 3.277
Southend 3.008
Woodbridge 2.260
Ashburn 1.802
Houston 1.720
Chandler 1.675
Seattle 1.299
Jacksonville 1.257
Ann Arbor 1.104
Cambridge 1.080
Wilmington 1.005
Dearborn 937
Nyköping 664
Hong Kong 520
Montréal 515
Izmir 478
Munich 470
Beijing 429
Mcallen 358
Singapore 358
Chicago 293
San Diego 293
Modena 277
Grafing 271
Princeton 270
Sofia 248
Eugene 222
Des Moines 164
Boardman 142
Bremen 129
Milan 119
London 114
Redwood City 114
Helsinki 108
New York 102
Padova 74
Dublin 59
Nanjing 52
Hefei 46
Los Angeles 41
Norwalk 40
Guangzhou 39
Shanghai 33
Kunming 31
San Mateo 31
Bologna 28
Falls Church 28
Jakarta 28
Rome 28
Brussels 26
Taipei 26
Chiswick 24
Kilburn 24
Tokyo 23
Hounslow 21
Jinan 21
Indiana 20
Parma 20
Reggio Nell'emilia 20
Toronto 19
Verona 19
Frankfurt am Main 16
Leawood 16
Turin 16
Santa Clara 15
Ottawa 14
Pavia 14
San Francisco 14
Wuhan 14
Acton 13
Auburn Hills 13
Lappeenranta 13
Perugia 13
Prescot 13
Reggio Emilia 13
Trento 13
Changsha 12
Fuzhou 12
Nanchang 12
Philadelphia 12
Augusta 11
Chengdu 11
Tulare 11
Correggio 10
Dong Ket 10
Duncan 10
Gif-sur-yvette 10
Mountain View 10
Nürnberg 10
Saint Petersburg 10
Bengaluru 9
Cassino 9
Hebei 9
Kuala Lumpur 9
Phoenix 9
Assèmini 8
Bari 8
Dongguan 8
Islington 8
Novellara 8
Totale 28.349
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 1.986
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 296
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 255
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 245
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 235
GaN-based power devices: Physics, reliability, and perspectives 235
A wireless personal sensor node for real time dosimetry of interventional radiology operators 224
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 224
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 220
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 213
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 212
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 204
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 202
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 200
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 196
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 196
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 196
Trapping and High Field Related Issues in GaN Power HEMTs 196
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 191
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 191
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 191
Optimization of 0.25µm GaN HEMTs through numerical simulations 191
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 191
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 190
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 190
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 190
A 4096-pixel MAPS device with on-chip data sparsification 190
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 185
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 184
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 184
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 183
PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs 183
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 180
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 180
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 179
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 179
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 179
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 178
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 178
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 178
The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs 177
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 176
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 176
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 174
Modeling challenges for high-efficiency visible light-emitting diodes 173
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 173
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 171
Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications 170
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 169
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 168
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 168
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 167
A review of failure modes and mechanisms of GaN-based HEMTs 167
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 167
Insights into the off-state breakdown mechanisms in power GaN HEMTs 167
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 165
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 164
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 164
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 163
An improved all-p-type multiguard termination structure for silicon radiation detectors 162
Breakdown investigation in GaN-based MIS-HEMTdevices 161
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 161
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 159
Sensori per la rivelazione del Radon 159
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 159
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 159
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 159
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 158
Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs 158
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 157
Development of silicon microheaters for chemoresistive gas sensors 157
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 157
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 157
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 157
Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications 156
In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs 156
Trap characterization in buried-gate n-channel 6H-SiC JFETs 156
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 155
SPICE modelling of impact ionisation effects in silicon bipolar transistors 155
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 155
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 155
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 155
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 154
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 154
A test chip for the development of PIN-type silicon radiation detectors 154
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 152
On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device 152
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 152
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 152
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 151
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 151
Radiation-hard semiconductor detectors for SuperLHC 150
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 150
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon 149
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 149
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator 149
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 149
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 148
Forward and reverse characteristics of irradiated MOSFET's 147
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 147
Totale 19.352
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Categoria #
all - tutte 145.688
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 145.688
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20207.067 0 0 312 567 809 1.145 1.295 741 986 345 506 361
2020/20217.033 709 239 528 733 660 479 814 640 685 734 398 414
2021/20224.917 212 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/2025895 715 129 51 0 0 0 0 0 0 0 0 0
Totale 36.053