VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 22.277
EU - Europa 9.586
AS - Asia 2.378
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 12
SA - Sud America 11
AF - Africa 9
Totale 34.292
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Nazione #
US - Stati Uniti d'America 21.721
GB - Regno Unito 4.046
DE - Germania 1.547
SE - Svezia 1.210
IT - Italia 1.201
CN - Cina 945
TR - Turchia 641
UA - Ucraina 579
CA - Canada 552
HK - Hong Kong 527
FI - Finlandia 311
BG - Bulgaria 248
FR - Francia 156
IN - India 69
IE - Irlanda 63
JP - Giappone 50
RU - Federazione Russa 45
TW - Taiwan 40
NL - Olanda 37
PT - Portogallo 34
BE - Belgio 33
KR - Corea 31
MY - Malesia 20
AT - Austria 16
EU - Europa 15
ES - Italia 12
SG - Singapore 12
VN - Vietnam 12
AU - Australia 10
CH - Svizzera 8
IL - Israele 8
IR - Iran 8
PL - Polonia 8
RO - Romania 8
CL - Cile 6
GR - Grecia 5
DK - Danimarca 4
A2 - ???statistics.table.value.countryCode.A2??? 3
BD - Bangladesh 3
BR - Brasile 3
DZ - Algeria 3
MX - Messico 3
PH - Filippine 3
AE - Emirati Arabi Uniti 2
CZ - Repubblica Ceca 2
HR - Croazia 2
HU - Ungheria 2
KZ - Kazakistan 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
A1 - Anonimo 1
AL - Albania 1
GE - Georgia 1
ID - Indonesia 1
IM - Isola di Man 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MA - Marocco 1
MD - Moldavia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
PA - Panama 1
PE - Perù 1
RS - Serbia 1
TH - Thailandia 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 34.292
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Città #
Fairfield 3.277
Southend 3.008
Woodbridge 2.260
Ashburn 1.788
Houston 1.720
Chandler 1.675
Seattle 1.299
Jacksonville 1.257
Ann Arbor 1.104
Cambridge 1.080
Wilmington 1.005
Dearborn 937
Nyköping 664
Hong Kong 520
Montréal 515
Izmir 478
Munich 468
Beijing 416
Mcallen 358
San Diego 293
Grafing 271
Princeton 270
Modena 269
Sofia 248
Eugene 222
Des Moines 164
Bremen 129
London 114
Redwood City 114
Helsinki 108
Milan 106
New York 102
Padova 71
Dublin 54
Nanjing 52
Hefei 46
Boardman 45
Norwalk 40
Guangzhou 34
Kunming 31
San Mateo 31
Bologna 28
Falls Church 28
Brussels 26
Chiswick 24
Kilburn 24
Chicago 23
Taipei 23
Tokyo 23
Hounslow 21
Jinan 21
Indiana 20
Los Angeles 20
Parma 20
Reggio Nell'emilia 20
Rome 19
Toronto 19
Verona 19
Leawood 16
Turin 16
Pavia 14
Acton 13
Auburn Hills 13
Ottawa 13
Perugia 13
Prescot 13
Shanghai 13
Trento 13
Fuzhou 12
Nanchang 12
Philadelphia 12
San Francisco 12
Augusta 11
Changsha 11
Chengdu 11
Reggio Emilia 11
Tulare 11
Correggio 10
Dong Ket 10
Duncan 10
Gif-sur-yvette 10
Mountain View 10
Nürnberg 10
Saint Petersburg 10
Bengaluru 9
Cassino 9
Hebei 9
Phoenix 9
Assèmini 8
Bari 8
Dongguan 8
Islington 8
Novellara 8
Stuttgart 8
Washington 8
Columbus 7
Frankfurt am Main 7
Lappeenranta 7
Mascalucia 7
Napoli 7
Totale 27.458
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 1.981
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 290
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 247
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 237
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 229
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 221
A wireless personal sensor node for real time dosimetry of interventional radiology operators 216
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 215
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 204
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 202
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 200
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 198
GaN-based power devices: Physics, reliability, and perspectives 197
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 194
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 193
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 193
Trapping and High Field Related Issues in GaN Power HEMTs 193
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 187
Optimization of 0.25µm GaN HEMTs through numerical simulations 187
A 4096-pixel MAPS device with on-chip data sparsification 186
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 185
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 184
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 184
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 184
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 184
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 183
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 182
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 180
PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs 179
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 178
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 177
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 176
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 176
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 175
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 175
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 175
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 174
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 173
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 173
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 173
The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs 172
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 169
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 168
Modeling challenges for high-efficiency visible light-emitting diodes 168
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 168
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 167
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 166
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 166
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 165
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 164
Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications 164
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 163
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 162
A review of failure modes and mechanisms of GaN-based HEMTs 162
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 161
Insights into the off-state breakdown mechanisms in power GaN HEMTs 160
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 159
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 158
An improved all-p-type multiguard termination structure for silicon radiation detectors 158
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 157
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 156
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 155
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 155
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 154
Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs 154
Development of silicon microheaters for chemoresistive gas sensors 154
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 154
Trap characterization in buried-gate n-channel 6H-SiC JFETs 154
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 153
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 153
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 153
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 152
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 152
Breakdown investigation in GaN-based MIS-HEMTdevices 152
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 152
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 152
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 152
SPICE modelling of impact ionisation effects in silicon bipolar transistors 151
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 151
Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications 151
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 150
Sensori per la rivelazione del Radon 150
In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs 150
A test chip for the development of PIN-type silicon radiation detectors 150
On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device 149
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 149
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 148
Radiation-hard semiconductor detectors for SuperLHC 148
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 148
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 147
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 146
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 146
Beam test results for the SuperB-SVT thin striplet detector 145
PFM2: A 32×32 readout chip for the PixFEL X-ray imager demonstrator 145
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 145
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon 144
Forward and reverse characteristics of irradiated MOSFET's 144
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 144
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 144
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 143
Totale 18.812
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Categoria #
all - tutte 127.269
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 127.269
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.657 0 0 0 0 0 0 0 0 0 430 1.051 1.176
2019/20208.132 550 515 312 567 809 1.145 1.295 741 986 345 506 361
2020/20217.033 709 239 528 733 660 479 814 640 685 734 398 414
2021/20224.917 212 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.271 141 180 158 299 609 188 168 358 104 66 0 0
Totale 34.741