VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 29.618
AS - Asia 12.403
EU - Europa 12.109
SA - Sud America 1.547
AF - Africa 117
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 16
AN - Antartide 1
Totale 55.833
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Nazione #
US - Stati Uniti d'America 28.837
GB - Regno Unito 4.724
CN - Cina 4.392
SG - Singapore 3.622
HK - Hong Kong 1.818
DE - Germania 1.767
IT - Italia 1.628
SE - Svezia 1.350
BR - Brasile 1.279
TR - Turchia 674
CA - Canada 663
KR - Corea 611
UA - Ucraina 610
VN - Vietnam 528
RU - Federazione Russa 521
FI - Finlandia 450
BG - Bulgaria 251
FR - Francia 226
IN - India 170
NL - Olanda 114
AR - Argentina 104
JP - Giappone 103
ID - Indonesia 94
IE - Irlanda 72
PL - Polonia 72
TW - Taiwan 69
MX - Messico 61
LT - Lituania 58
BD - Bangladesh 56
BE - Belgio 52
ZA - Sudafrica 47
AT - Austria 46
EC - Ecuador 46
ES - Italia 46
PT - Portogallo 35
CO - Colombia 32
IQ - Iraq 32
MY - Malesia 27
CH - Svizzera 22
SA - Arabia Saudita 22
AE - Emirati Arabi Uniti 21
CL - Cile 21
PK - Pakistan 21
PY - Paraguay 21
UZ - Uzbekistan 19
MA - Marocco 18
VE - Venezuela 18
EU - Europa 15
IL - Israele 14
AU - Australia 12
DK - Danimarca 11
PE - Perù 11
PH - Filippine 11
DO - Repubblica Dominicana 10
DZ - Algeria 10
JO - Giordania 10
KZ - Kazakistan 10
PA - Panama 10
RO - Romania 10
AZ - Azerbaigian 9
JM - Giamaica 9
NP - Nepal 9
GR - Grecia 8
IR - Iran 8
AL - Albania 7
BO - Bolivia 7
EG - Egitto 7
PS - Palestinian Territory 7
TN - Tunisia 7
CR - Costa Rica 6
KE - Kenya 6
KG - Kirghizistan 6
LB - Libano 6
HN - Honduras 5
NI - Nicaragua 5
RS - Serbia 5
TH - Thailandia 5
UY - Uruguay 5
LK - Sri Lanka 4
LU - Lussemburgo 4
SK - Slovacchia (Repubblica Slovacca) 4
TT - Trinidad e Tobago 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AM - Armenia 3
BA - Bosnia-Erzegovina 3
CI - Costa d'Avorio 3
KH - Cambogia 3
KW - Kuwait 3
LA - Repubblica Popolare Democratica del Laos 3
NG - Nigeria 3
OM - Oman 3
SN - Senegal 3
BB - Barbados 2
BH - Bahrain 2
BN - Brunei Darussalam 2
CG - Congo 2
CZ - Repubblica Ceca 2
HR - Croazia 2
HU - Ungheria 2
LY - Libia 2
Totale 55.793
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Città #
Fairfield 3.277
Southend 3.008
Santa Clara 2.840
Woodbridge 2.261
Ashburn 2.173
Hefei 2.028
Singapore 1.970
Hong Kong 1.794
Houston 1.751
Chandler 1.677
Seattle 1.309
Jacksonville 1.265
Ann Arbor 1.104
Cambridge 1.081
Wilmington 1.029
Dearborn 937
London 708
Nyköping 664
Beijing 630
Seoul 568
Chicago 530
Munich 516
Montréal 515
Izmir 488
Los Angeles 368
Mcallen 358
Modena 300
San Diego 295
Grafing 271
Princeton 270
Sofia 251
Council Bluffs 244
Eugene 222
Helsinki 221
New York 192
Ho Chi Minh City 183
Milan 180
The Dalles 178
Buffalo 170
Des Moines 165
Boardman 151
Moscow 138
São Paulo 135
Bremen 129
Hanoi 124
Kent 119
Redwood City 114
Shanghai 96
Dallas 92
Padova 85
Salt Lake City 75
Falkenstein 73
Guangzhou 73
Tokyo 68
Frankfurt am Main 64
Dublin 63
Jakarta 63
Brooklyn 58
Nanjing 57
Columbus 55
Rio de Janeiro 55
Warsaw 54
Montreal 51
Toronto 50
Elk Grove Village 48
Tampa 45
Rome 44
Bologna 41
Brussels 41
Norwalk 41
Atlanta 38
Phoenix 38
Denver 36
San Francisco 36
Kunming 35
Redondo Beach 33
Taipei 32
Belo Horizonte 31
San Mateo 31
Amsterdam 30
Reggio Emilia 29
Changsha 28
Chennai 28
Falls Church 28
Johannesburg 26
Philadelphia 26
Stockholm 26
Curitiba 25
Orem 25
Ottawa 25
Boston 24
Chiswick 24
Da Nang 24
Kilburn 24
Manchester 24
Nuremberg 24
Sterling 24
Haiphong 23
Jinan 23
Charlotte 22
Totale 41.135
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.059
GaN-based power devices: Physics, reliability, and perspectives 488
A wireless personal sensor node for real time dosimetry of interventional radiology operators 377
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 375
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 333
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 329
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 328
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 313
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 311
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 310
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 309
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 307
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 303
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 301
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 299
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 296
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 296
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 295
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 295
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 294
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 293
A 4096-pixel MAPS device with on-chip data sparsification 293
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 288
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 287
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 286
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 283
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 279
An improved all-p-type multiguard termination structure for silicon radiation detectors 278
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 277
Sensori per la rivelazione del Radon 275
A review of failure modes and mechanisms of GaN-based HEMTs 274
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 273
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 273
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 272
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 268
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 268
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 267
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 266
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 258
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 256
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 255
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 254
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 252
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 252
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 252
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 250
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 250
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 250
Trapping and High Field Related Issues in GaN Power HEMTs 250
Optimization of 0.25µm GaN HEMTs through numerical simulations 249
Modeling challenges for high-efficiency visible light-emitting diodes 248
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 248
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 247
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 247
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 245
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 245
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 245
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 244
A test chip for the development of PIN-type silicon radiation detectors 244
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 243
An all-p-type termination structure for silicon microstrip detectors 242
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 241
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 241
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 239
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 238
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 237
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 237
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 236
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 236
SPICE modelling of impact ionisation effects in silicon bipolar transistors 235
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 235
A compact method for measuring parasitic resistances in bipolar transistors 234
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 233
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 231
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 231
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 231
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants 231
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 230
Insights into the off-state breakdown mechanisms in power GaN HEMTs 230
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 229
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 229
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 228
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 228
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon 227
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 227
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 226
Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications 226
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 226
Breakdown investigation in GaN-based MIS-HEMTdevices 225
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 225
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 224
PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs 224
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 223
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 222
Junction heterostructures for high performance electronics 222
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 222
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 222
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 221
Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications 221
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 221
Totale 27.888
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Categoria #
all - tutte 213.307
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 213.307
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20214.164 0 0 0 0 0 479 814 640 685 734 398 414
2021/20224.917 212 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/202512.042 715 129 94 819 1.970 1.524 770 887 1.094 551 1.892 1.597
2025/20269.107 1.115 1.188 1.698 1.914 2.194 998 0 0 0 0 0 0
Totale 56.307