VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 38.715
AS - Asia 16.192
EU - Europa 15.400
SA - Sud America 1.941
Continente sconosciuto - Info sul continente non disponibili 522
AF - Africa 228
OC - Oceania 21
AN - Antartide 1
Totale 73.020
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Nazione #
US - Stati Uniti d'America 37.377
CN - Cina 4.816
GB - Regno Unito 4.806
SG - Singapore 4.688
SE - Svezia 3.120
IT - Italia 2.389
HK - Hong Kong 2.000
DE - Germania 1.837
BR - Brasile 1.517
VN - Vietnam 1.401
CA - Canada 928
KR - Corea 811
TR - Turchia 708
UA - Ucraina 629
RU - Federazione Russa 564
FI - Finlandia 552
FR - Francia 507
BD - Bangladesh 488
IN - India 319
BG - Bulgaria 258
JP - Giappone 146
AR - Argentina 142
NL - Olanda 140
ID - Indonesia 126
MX - Messico 123
TW - Taiwan 105
IQ - Iraq 98
PL - Polonia 85
IE - Irlanda 75
ES - Italia 71
EC - Ecuador 67
ZA - Sudafrica 67
LT - Lituania 65
BE - Belgio 64
CO - Colombia 64
PK - Pakistan 54
AT - Austria 50
CR - Costa Rica 48
MY - Malesia 47
AE - Emirati Arabi Uniti 46
PT - Portogallo 43
VE - Venezuela 42
IL - Israele 39
SA - Arabia Saudita 39
CL - Cile 37
UZ - Uzbekistan 35
MA - Marocco 34
JM - Giamaica 33
PH - Filippine 31
CH - Svizzera 30
GT - Guatemala 29
HN - Honduras 28
PY - Paraguay 26
SV - El Salvador 24
JO - Giordania 23
NI - Nicaragua 23
NP - Nepal 22
TH - Thailandia 22
PR - Porto Rico 21
AZ - Azerbaigian 20
TT - Trinidad e Tobago 20
DZ - Algeria 19
PE - Perù 19
DK - Danimarca 18
KE - Kenya 17
AU - Australia 16
CW - ???statistics.table.value.countryCode.CW??? 15
DO - Repubblica Dominicana 15
EU - Europa 15
KZ - Kazakistan 15
TN - Tunisia 15
BO - Bolivia 13
EG - Egitto 13
RO - Romania 13
EE - Estonia 12
CZ - Repubblica Ceca 11
ET - Etiopia 11
PA - Panama 11
SC - Seychelles 11
LB - Libano 10
PS - Palestinian Territory 10
UY - Uruguay 10
BB - Barbados 9
GP - Guadalupe 9
GR - Grecia 9
OM - Oman 9
AL - Albania 8
IR - Iran 8
BH - Bahrain 7
BY - Bielorussia 7
KG - Kirghizistan 7
SN - Senegal 7
LK - Sri Lanka 6
RS - Serbia 6
CY - Cipro 5
HU - Ungheria 5
MD - Moldavia 5
NG - Nigeria 5
SK - Slovacchia (Repubblica Slovacca) 5
AM - Armenia 4
Totale 72.429
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Città #
Ashburn 4.372
Fairfield 3.279
Santa Clara 3.034
Southend 3.008
Singapore 2.629
Woodbridge 2.262
Hefei 2.028
Hong Kong 1.955
Stockholm 1.792
Houston 1.772
Chandler 1.678
San Jose 1.410
Seattle 1.330
Jacksonville 1.274
Council Bluffs 1.209
Ann Arbor 1.104
Cambridge 1.084
Wilmington 1.038
Dearborn 937
Chicago 873
Seoul 750
Beijing 729
London 714
Nyköping 664
Los Angeles 523
Munich 517
Montréal 515
Izmir 489
Ho Chi Minh City 439
The Dalles 382
Milan 379
Mcallen 358
Hanoi 351
Helsinki 320
Modena 320
San Diego 300
New York 287
Princeton 284
Grafing 271
Sofia 252
Eugene 222
Buffalo 220
Lauterbourg 201
São Paulo 185
Des Moines 169
Boardman 167
Dallas 144
Moscow 140
Bremen 129
Kent 121
Columbus 115
Redwood City 114
Shanghai 104
Toronto 96
Tokyo 90
Falkenstein 88
Salt Lake City 86
Frankfurt am Main 85
Padova 85
Brooklyn 83
Da Nang 83
Rome 82
Guangzhou 76
Montreal 76
Orem 70
Phoenix 70
Rio de Janeiro 69
Atlanta 67
Saint Augustine 67
Jakarta 65
Dublin 64
North Bergen 62
Nanjing 61
Norfolk 61
Bologna 60
Chennai 60
Warsaw 60
Washington 60
San Francisco 59
Tampa 58
Haiphong 56
Elk Grove Village 51
Miano 51
Denver 48
Charlotte 47
Taipei 47
Norwalk 46
Brussels 45
Amsterdam 39
Mexico City 39
Philadelphia 39
Baghdad 37
Belo Horizonte 36
Kunming 36
San Mateo 36
Vancouver 36
Brantford 35
Johannesburg 34
Manchester 34
Miami 34
Totale 51.712
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.112
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 2.051
GaN-based power devices: Physics, reliability, and perspectives 680
A wireless personal sensor node for real time dosimetry of interventional radiology operators 436
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 434
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 413
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 401
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 397
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 390
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 389
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 383
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 377
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 377
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 374
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 371
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 366
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 363
A 4096-pixel MAPS device with on-chip data sparsification 358
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 356
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 354
Sensori per la rivelazione del Radon 353
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 352
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 349
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 348
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 345
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 343
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 342
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 341
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 341
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 340
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 338
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 337
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 337
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 335
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 333
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 332
A review of failure modes and mechanisms of GaN-based HEMTs 330
Reliability of GaN high-electron-mobility transistors: state of the art and perspectives 329
An improved all-p-type multiguard termination structure for silicon radiation detectors 328
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 328
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 327
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 326
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 326
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 325
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 325
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 324
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 324
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 322
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 321
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 320
Optimization of 0.25µm GaN HEMTs through numerical simulations 318
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 315
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 312
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 312
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 312
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 311
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 311
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 311
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 311
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs 310
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 309
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 306
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 306
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 302
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 301
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 301
Trapping and High Field Related Issues in GaN Power HEMTs 300
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 299
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 292
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 290
An all-p-type termination structure for silicon microstrip detectors 289
SPICE modelling of impact ionisation effects in silicon bipolar transistors 288
Modeling challenges for high-efficiency visible light-emitting diodes 288
A test chip for the development of PIN-type silicon radiation detectors 288
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 288
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 286
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 286
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 284
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 283
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 281
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 280
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 280
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 280
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 279
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 278
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 278
Breakdown investigation in GaN-based MIS-HEMTdevices 277
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants 276
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 275
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 275
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 274
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 274
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 274
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 273
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 272
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 272
On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device 272
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 272
A compact method for measuring parasitic resistances in bipolar transistors 272
Totale 36.001
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Categoria #
all - tutte 264.836
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 264.836
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.457 0 0 0 0 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/202512.042 715 129 94 819 1.970 1.524 770 887 1.094 551 1.892 1.597
2025/202619.434 1.115 1.188 1.698 1.914 2.194 1.453 1.857 901 3.632 1.345 1.257 880
2026/20276.386 680 1.207 1.831 2.313 355 0 0 0 0 0 0 0
Totale 73.020