VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 25.704
EU - Europa 10.263
AS - Asia 4.278
SA - Sud America 32
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 12
AF - Africa 9
Totale 40.317
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Nazione #
US - Stati Uniti d'America 25.134
GB - Regno Unito 4.056
DE - Germania 1.599
IT - Italia 1.389
CN - Cina 1.301
SE - Svezia 1.254
SG - Singapore 1.119
HK - Hong Kong 855
TR - Turchia 641
UA - Ucraina 580
CA - Canada 564
FI - Finlandia 375
RU - Federazione Russa 278
BG - Bulgaria 248
FR - Francia 161
IN - India 81
IE - Irlanda 71
ID - Indonesia 58
JP - Giappone 54
NL - Olanda 51
TW - Taiwan 47
KR - Corea 43
BE - Belgio 42
PT - Portogallo 34
LT - Lituania 25
MY - Malesia 25
BR - Brasile 22
ES - Italia 21
AT - Austria 18
CH - Svizzera 16
EU - Europa 15
VN - Vietnam 13
PL - Polonia 12
AU - Australia 10
IL - Israele 9
IR - Iran 8
RO - Romania 8
CL - Cile 6
GR - Grecia 6
AE - Emirati Arabi Uniti 5
BD - Bangladesh 4
DK - Danimarca 4
MX - Messico 4
A2 - ???statistics.table.value.countryCode.A2??? 3
DZ - Algeria 3
IQ - Iraq 3
PH - Filippine 3
CZ - Repubblica Ceca 2
HR - Croazia 2
HU - Ungheria 2
KZ - Kazakistan 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
TN - Tunisia 2
VE - Venezuela 2
A1 - Anonimo 1
AL - Albania 1
AR - Argentina 1
GE - Georgia 1
IM - Isola di Man 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MA - Marocco 1
MD - Moldavia 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
PE - Perù 1
RS - Serbia 1
SA - Arabia Saudita 1
TM - Turkmenistan 1
ZA - Sudafrica 1
Totale 40.317
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Città #
Fairfield 3.277
Southend 3.008
Santa Clara 2.806
Woodbridge 2.260
Ashburn 1.830
Houston 1.720
Chandler 1.675
Seattle 1.301
Jacksonville 1.257
Ann Arbor 1.104
Cambridge 1.080
Wilmington 1.005
Dearborn 937
Hong Kong 846
Singapore 836
Nyköping 664
Montréal 515
Izmir 478
Munich 477
Beijing 432
Mcallen 358
Chicago 293
San Diego 293
Modena 279
Grafing 271
Princeton 270
Sofia 248
Eugene 222
Helsinki 165
Des Moines 164
Boardman 142
Milan 139
Bremen 129
London 118
Redwood City 114
New York 102
Moscow 99
Padova 81
Dublin 62
Jakarta 57
Nanjing 52
Los Angeles 48
Guangzhou 47
Hefei 46
Norwalk 40
Shanghai 39
Bologna 33
Brussels 33
Kunming 31
San Mateo 31
Falls Church 28
Rome 28
Toronto 28
Taipei 26
Chiswick 24
Kilburn 24
Tokyo 23
Jinan 22
Falkenstein 21
Frankfurt am Main 21
Hounslow 21
Indiana 20
Parma 20
Reggio Nell'emilia 20
Verona 19
Reggio Emilia 17
Turin 17
Wuhan 17
Leawood 16
Ottawa 16
Lappeenranta 14
Pavia 14
Perugia 14
San Francisco 14
Acton 13
Auburn Hills 13
Changsha 13
Chengdu 13
Prescot 13
Trento 13
Bengaluru 12
Fuzhou 12
Nanchang 12
Philadelphia 12
Augusta 11
Bari 11
Dongguan 11
Tulare 11
Correggio 10
Dong Ket 10
Duncan 10
Gif-sur-yvette 10
Mountain View 10
Nürnberg 10
Saint Petersburg 10
Cassino 9
Hebei 9
Kuala Lumpur 9
Phoenix 9
Amsterdam 8
Totale 32.282
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.003
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 318
GaN-based power devices: Physics, reliability, and perspectives 287
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 275
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 266
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 256
A wireless personal sensor node for real time dosimetry of interventional radiology operators 249
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 243
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 240
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 239
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 232
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 230
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 225
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 223
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 220
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 218
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 216
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 214
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 213
A 4096-pixel MAPS device with on-chip data sparsification 213
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 212
Optimization of 0.25µm GaN HEMTs through numerical simulations 212
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 210
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 210
Trapping and High Field Related Issues in GaN Power HEMTs 209
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 208
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 207
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 206
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 202
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 202
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 202
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 200
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 199
PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs 198
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 198
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 198
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 197
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 197
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 197
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 195
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 195
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 195
The PixFEL front-end for X-ray imaging in the radiation environment of next generation FELs 194
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 192
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 189
Modeling challenges for high-efficiency visible light-emitting diodes 189
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 189
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 189
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 188
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 188
A review of failure modes and mechanisms of GaN-based HEMTs 188
Insights into the off-state breakdown mechanisms in power GaN HEMTs 188
Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications 186
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 186
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 185
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 185
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 185
An improved all-p-type multiguard termination structure for silicon radiation detectors 183
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 181
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 181
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 181
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 180
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 180
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 180
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 179
Sensori per la rivelazione del Radon 178
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 177
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 177
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 177
Breakdown investigation in GaN-based MIS-HEMTdevices 177
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 177
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 176
A test chip for the development of PIN-type silicon radiation detectors 176
SPICE modelling of impact ionisation effects in silicon bipolar transistors 175
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 175
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 175
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 174
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 174
In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs 174
Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs 174
Development of silicon microheaters for chemoresistive gas sensors 174
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 172
Trap characterization in buried-gate n-channel 6H-SiC JFETs 172
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 172
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 172
Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications 171
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 171
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 171
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 169
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 169
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT 168
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 167
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 167
An all-p-type termination structure for silicon microstrip detectors 167
Radiation-hard semiconductor detectors for SuperLHC 167
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 167
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 167
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 166
On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device 166
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 166
Totale 21.312
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Categoria #
all - tutte 161.833
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 161.833
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.234 0 0 0 0 0 0 1.295 741 986 345 506 361
2020/20217.033 709 239 528 733 660 479 814 640 685 734 398 414
2021/20224.917 212 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/20255.617 715 129 94 819 1.970 1.524 366 0 0 0 0 0
Totale 40.775