VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 33.874
AS - Asia 16.085
EU - Europa 15.061
SA - Sud America 1.888
Continente sconosciuto - Info sul continente non disponibili 503
AF - Africa 218
OC - Oceania 21
AN - Antartide 1
Totale 67.651
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Nazione #
US - Stati Uniti d'America 32.824
CN - Cina 4.795
GB - Regno Unito 4.763
SG - Singapore 4.678
SE - Svezia 3.119
IT - Italia 2.183
HK - Hong Kong 1.997
DE - Germania 1.830
BR - Brasile 1.480
VN - Vietnam 1.400
KR - Corea 804
CA - Canada 801
TR - Turchia 704
UA - Ucraina 625
FI - Finlandia 552
RU - Federazione Russa 533
FR - Francia 497
BD - Bangladesh 479
IN - India 316
BG - Bulgaria 258
AR - Argentina 140
JP - Giappone 140
NL - Olanda 135
ID - Indonesia 121
MX - Messico 118
IQ - Iraq 98
TW - Taiwan 97
PL - Polonia 85
IE - Irlanda 73
ZA - Sudafrica 67
ES - Italia 63
EC - Ecuador 62
BE - Belgio 60
LT - Lituania 60
CO - Colombia 58
PK - Pakistan 52
AT - Austria 50
MY - Malesia 46
AE - Emirati Arabi Uniti 43
PT - Portogallo 43
VE - Venezuela 40
SA - Arabia Saudita 39
CL - Cile 37
UZ - Uzbekistan 35
MA - Marocco 34
PH - Filippine 31
CH - Svizzera 29
CR - Costa Rica 26
PY - Paraguay 26
JO - Giordania 23
NP - Nepal 22
TH - Thailandia 22
AZ - Azerbaigian 20
DZ - Algeria 19
JM - Giamaica 19
PE - Perù 19
KE - Kenya 17
AU - Australia 16
DK - Danimarca 16
IL - Israele 16
DO - Repubblica Dominicana 15
EU - Europa 15
KZ - Kazakistan 15
TN - Tunisia 15
EG - Egitto 13
RO - Romania 13
BO - Bolivia 12
CZ - Repubblica Ceca 11
ET - Etiopia 11
NI - Nicaragua 11
LB - Libano 10
PA - Panama 10
PS - Palestinian Territory 10
UY - Uruguay 10
GR - Grecia 9
HN - Honduras 9
OM - Oman 9
AL - Albania 8
IR - Iran 8
PR - Porto Rico 8
TT - Trinidad e Tobago 8
BH - Bahrain 7
BY - Bielorussia 7
GT - Guatemala 7
KG - Kirghizistan 7
SN - Senegal 7
LK - Sri Lanka 6
RS - Serbia 6
SV - El Salvador 6
CY - Cipro 5
MD - Moldavia 5
NG - Nigeria 5
SK - Slovacchia (Repubblica Slovacca) 5
AO - Angola 4
BA - Bosnia-Erzegovina 4
CG - Congo 4
GE - Georgia 4
HU - Ungheria 4
KW - Kuwait 4
LU - Lussemburgo 4
Totale 67.086
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Città #
Fairfield 3.278
Ashburn 3.026
Southend 3.008
Santa Clara 2.980
Singapore 2.622
Woodbridge 2.261
Hefei 2.028
Hong Kong 1.953
Stockholm 1.792
Houston 1.759
Chandler 1.678
Seattle 1.318
Jacksonville 1.271
Ann Arbor 1.104
Cambridge 1.081
Wilmington 1.032
San Jose 985
Dearborn 937
Chicago 847
Seoul 750
Beijing 726
London 712
Nyköping 664
Munich 517
Montréal 515
Izmir 489
Council Bluffs 471
Los Angeles 469
Ho Chi Minh City 438
The Dalles 382
Mcallen 358
Hanoi 351
Milan 323
Helsinki 320
Modena 314
San Diego 296
Princeton 272
Grafing 271
New York 257
Sofia 252
Eugene 222
Buffalo 202
Lauterbourg 201
Des Moines 169
Boardman 162
São Paulo 161
Moscow 140
Bremen 129
Dallas 122
Kent 120
Redwood City 114
Shanghai 104
Columbus 90
Falkenstein 88
Tokyo 86
Frankfurt am Main 85
Padova 85
Salt Lake City 84
Da Nang 83
Guangzhou 76
Brooklyn 71
Rio de Janeiro 68
Orem 66
Jakarta 65
Dublin 64
Toronto 64
Rome 63
Montreal 61
Nanjing 61
Chennai 60
Warsaw 60
Haiphong 56
Bologna 55
Tampa 55
Atlanta 53
Phoenix 52
Elk Grove Village 51
Miano 50
Taipei 47
Washington 46
Brussels 45
San Francisco 45
Denver 42
Norwalk 42
Amsterdam 38
Mexico City 38
Baghdad 37
Charlotte 37
Belo Horizonte 36
Kunming 36
Brantford 35
San Mateo 35
Johannesburg 34
Dhaka 33
Manchester 33
Redondo Beach 33
Vancouver 32
Philadelphia 31
Reggio Emilia 31
Changsha 30
Totale 48.521
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.093
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 2.024
GaN-based power devices: Physics, reliability, and perspectives 599
A wireless personal sensor node for real time dosimetry of interventional radiology operators 419
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 408
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 377
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 372
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 371
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 361
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 358
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 357
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 356
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 356
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 353
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 350
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 340
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 338
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 336
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 336
A 4096-pixel MAPS device with on-chip data sparsification 335
Sensori per la rivelazione del Radon 331
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 330
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 329
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 329
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 328
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 326
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 324
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 323
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 323
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 323
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 322
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 320
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 316
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 315
A review of failure modes and mechanisms of GaN-based HEMTs 315
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 313
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 312
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 310
An improved all-p-type multiguard termination structure for silicon radiation detectors 309
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 309
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 307
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 306
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 304
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 303
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 302
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 301
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 301
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 298
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 297
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 295
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 293
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 292
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 292
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 291
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 291
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 291
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 290
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
Reliability of GaN high-electron-mobility transistors: state of the art and perspectives 288
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 283
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 278
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 278
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs 276
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 276
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 276
SPICE modelling of impact ionisation effects in silicon bipolar transistors 275
Modeling challenges for high-efficiency visible light-emitting diodes 275
An all-p-type termination structure for silicon microstrip detectors 275
Trapping and High Field Related Issues in GaN Power HEMTs 275
A test chip for the development of PIN-type silicon radiation detectors 274
Optimization of 0.25µm GaN HEMTs through numerical simulations 273
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 273
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 272
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 271
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 271
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 271
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 271
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 269
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 268
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 267
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 266
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 264
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 263
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 262
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 260
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 260
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants 259
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 259
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 258
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 257
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 257
Breakdown investigation in GaN-based MIS-HEMTdevices 256
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 256
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 255
A compact method for measuring parasitic resistances in bipolar transistors 255
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 253
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 253
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes 251
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 251
Totale 33.776
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Categoria #
all - tutte 247.455
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 247.455
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.705 0 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/202512.042 715 129 94 819 1.970 1.524 770 887 1.094 551 1.892 1.597
2025/202619.434 1.115 1.188 1.698 1.914 2.194 1.453 1.857 901 3.632 1.345 1.257 880
2026/20271.017 680 337 0 0 0 0 0 0 0 0 0 0
Totale 67.651