We present a detailed characterization of deep traps present in buried gate, n-channel 6H-SiC JFETs, based on transconductance measurements as a function of frequency. Four different deep levels have been identified, which are characterized by activation energies of 0.16, 0.18, 0.28 and 0.54 eV. Furthermore, based on the transconductance frequency dispersion features (upward or downward dispersion), we have been able to infer that three deep levels (0.16, 0.18 and 0.54 eV) are hole traps localized in thep-gate layer and one (0.28 eV) is an electron trap localizedin the n-channel.

Trap characterization in buried-gate n-channel 6H-SiC JFETs / Meneghesso, G.; Chini, Alessandro; Verzellesi, Giovanni; Cavallini, A.; Canali, Claudio; Zanoni, E.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 22:(2001), pp. 432-434. [10.1109/55.944330]

Trap characterization in buried-gate n-channel 6H-SiC JFETs

CHINI, Alessandro;VERZELLESI, Giovanni;CANALI, Claudio;
2001

Abstract

We present a detailed characterization of deep traps present in buried gate, n-channel 6H-SiC JFETs, based on transconductance measurements as a function of frequency. Four different deep levels have been identified, which are characterized by activation energies of 0.16, 0.18, 0.28 and 0.54 eV. Furthermore, based on the transconductance frequency dispersion features (upward or downward dispersion), we have been able to infer that three deep levels (0.16, 0.18 and 0.54 eV) are hole traps localized in thep-gate layer and one (0.28 eV) is an electron trap localizedin the n-channel.
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432
434
Trap characterization in buried-gate n-channel 6H-SiC JFETs / Meneghesso, G.; Chini, Alessandro; Verzellesi, Giovanni; Cavallini, A.; Canali, Claudio; Zanoni, E.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 22:(2001), pp. 432-434. [10.1109/55.944330]
Meneghesso, G.; Chini, Alessandro; Verzellesi, Giovanni; Cavallini, A.; Canali, Claudio; Zanoni, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/595115
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