ItalianoCANALI, Claudio
Pubblicazioni
Risultati 1 - 20 di 47 (tempo di esecuzione: 0.001 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements | 1982 | Canali, Claudio; G., De Cicco; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea |
| 2 | Breakdown and low-temperature anomalous effects in 6H SiC JFETs | 1998 | G., Meneghesso; A., Bartolini; Verzellesi, Giovanni; A., Cavallini; A., Castaldini; Canali, Claudio; E., Zanoni |
| 3 | Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs | 2001 | R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; Canali, Claudio; C., Lanzieri |
| 4 | Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation | 2003 | Meneghesso, G.; Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Chini, Alessandro; Canali, Claudio; Zanoni, E. |
| 5 | DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues | 2005 | Verzellesi, Giovanni; Meneghesso, G.; Chini, Alessandro; Zanoni, E.; Canali, Claudio |
| 6 | Deep traps in Beta-rhombohedral boron | 1975 | Prudenziati, Maria; Canali, Claudio |
| 7 | Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations | 2002 | Verzellesi, Giovanni; G., Meneghesso; Mazzanti, Andrea; Canali, Claudio; E., Zanoni |
| 8 | DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION | 1993 | Bacchetta, N; Bisello, D; Canali, Claudio; Fuochi, Pg; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni |
| 9 | Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs | 2001 | Mazzanti, Andrea; Verzellesi, Giovanni; Vicini, L.; Canali, Claudio; Chini, Alessandro; Meneghesso, G.; Zanoni, E.; Lanzieri, C. |
| 10 | Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs | 2003 | Verzellesi, Giovanni; Basile, Alberto Francesco; Mazzanti, Andrea; A., Cavallini; Canali, Claudio |
| 11 | Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's | 1996 | Canali, Claudio; Pavan, Paolo; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, A; Vendrame, L; Zanoni, E; Zandler, G. |
| 12 | Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs | 2002 | Basile, Alberto Francesco; Mazzanti, Andrea; E., Manzini; Verzellesi, Giovanni; Canali, Claudio; R., Pierobon; C., Lanzieri |
| 13 | Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) | 2003 | Verzellesi, Giovanni; Mazzanti, Andrea; Basile, Alberto Francesco; A., Boni; E., Zanoni; Canali, Claudio |
| 14 | Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s | 2003 | Verzellesi, Giovanni; Basile, Alberto Francesco; A., Cavallini; A., Castaldini; C., Lanzieri; Canali, Claudio |
| 15 | Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design | 2001 | R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio |
| 16 | Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s | 2002 | Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Meneghesso, G.; Chini, Alessandro; Mishra, U. K.; Canali, Claudio; Zanoni, E. |
| 17 | Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs | 1993 | E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio |
| 18 | Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal | 1993 | Verzellesi, Giovanni; R., Turetta; Pavan, Paolo; A., Collini; A., Chantre; A., Marty; Canali, Claudio; E., Zanoni |
| 19 | FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY | 1994 | Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Giraldo, A; Gotra, Y; Paccagnella, A; Piacentino, Gm; Verzellesi, Giovanni |
| 20 | Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium | 1977 | Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U. |
Dettaglio
CANALI, Claudio
EX-Dip. INGEGNERIA DELL'INFORMAZIONE-(2001/2012)
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