Two-dimensional device simulations are adopted as a tool to characterize deep levels in 6H-SiC, buried gate, n-channel JFETs. Deep levels can be detected by means of Deep Level Transient Spectroscopy (DLTS) or transconductance frequency dispersion measurements. Subsequent simulation of the drain-current transients following the application of a gate-source voltage step allows the energetic and spatial position of the different deep levels to be inferred.
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations / Verzellesi, Giovanni; G., Meneghesso; Mazzanti, Andrea; Canali, Claudio; E., Zanoni. - STAMPA. - (2002). ((Intervento presentato al convegno Workshop on Physical Simulation of Semiconductor Devices (PSSD) tenutosi a Leeds (UK) nel Mar. 2002.
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations
VERZELLESI, Giovanni;MAZZANTI, Andrea;CANALI, Claudio;
2002
Abstract
Two-dimensional device simulations are adopted as a tool to characterize deep levels in 6H-SiC, buried gate, n-channel JFETs. Deep levels can be detected by means of Deep Level Transient Spectroscopy (DLTS) or transconductance frequency dispersion measurements. Subsequent simulation of the drain-current transients following the application of a gate-source voltage step allows the energetic and spatial position of the different deep levels to be inferred.
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