Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs / Verzellesi, Giovanni; Basile, Alberto Francesco; Mazzanti, Andrea; A., Cavallini; Canali, Claudio. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 39:21(2003), pp. 1548-1549. [10.1049/el:20030950]
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs
VERZELLESI, Giovanni;BASILE, Alberto Francesco;MAZZANTI, Andrea;CANALI, Claudio
2003
Abstract
Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
