The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a reliability bottleneck. On the other hand, field related degradation and failures have gained increasing relevance. However, the physical understanding of these degradation mechanisms and their relationship with FET design is still underdeveloped. The aim of this paper is to contribute to the comprehension of high-field reliability issues in GaAs power HFETs by coupling experiments with numerical simulations.
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs / R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; Canali, Claudio; C., Lanzieri. - STAMPA. - (2001), pp. 59-62. (Intervento presentato al convegno European Heterostructure Technology Workshop tenutosi a Padova (Italy) nel Oct. 2001).
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs
VERZELLESI, Giovanni;BORGARINO, Mattia;CANALI, Claudio;
2001
Abstract
The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a reliability bottleneck. On the other hand, field related degradation and failures have gained increasing relevance. However, the physical understanding of these degradation mechanisms and their relationship with FET design is still underdeveloped. The aim of this paper is to contribute to the comprehension of high-field reliability issues in GaAs power HFETs by coupling experiments with numerical simulations.
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