This article concerns the existence of a double-junction effect in proton-irradiated silicon p(+)-nu-n(+) (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p(+)-nu-n(+) diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect.
Double-junction effect in proton-irradiated silicon diodes / A., Castaldini; A., Cavallini; L., Polenta; Canali, Claudio; Nava, Filippo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 92:4(2002), pp. 2013-2016. [10.1063/1.1495077]
Double-junction effect in proton-irradiated silicon diodes
CANALI, Claudio;NAVA, Filippo
2002
Abstract
This article concerns the existence of a double-junction effect in proton-irradiated silicon p(+)-nu-n(+) (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p(+)-nu-n(+) diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect.Pubblicazioni consigliate
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