The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as Id -Vds kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage.
Breakdown and low-temperature anomalous effects in 6H SiC JFETs / G., Meneghesso; A., Bartolini; Verzellesi, Giovanni; A., Cavallini; A., Castaldini; Canali, Claudio; E., Zanoni. - STAMPA. - (1998), pp. 695-698. ((Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a S. Francisco (California, USA) nel Dec. 1998.
Breakdown and low-temperature anomalous effects in 6H SiC JFETs
VERZELLESI, Giovanni;CANALI, Claudio;
1998-01-01
Abstract
The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as Id -Vds kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
