The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs HFETs both through measurements and two-dimensional device simulations. The kink arises from the interaction of recess surface defects with impact-ionization-generated holes, screening the negative trapped charge and partially discharging surface deep levels. Under pulsed operation, kink dynamics is governed by hole emission and capture phenomena, prevailing at low and high drain-source voltages, respectively. At high drain-source voltages, in particular, the drain-current time constant depends on impact ionization, the latter controlling surface hole density and, through it, hole capture rate.

Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Vicini, L.; Canali, Claudio; Chini, Alessandro; Meneghesso, G.; Zanoni, E.; Lanzieri, C.. - STAMPA. - (2001), pp. 137-142. ((Intervento presentato al convegno International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO) tenutosi a Vienna (Austria) nel Nov. 2001 [10.1109/EDMO.2001.974297].

Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs

MAZZANTI, Andrea;VERZELLESI, Giovanni;CANALI, Claudio;CHINI, Alessandro;
2001

Abstract

The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs HFETs both through measurements and two-dimensional device simulations. The kink arises from the interaction of recess surface defects with impact-ionization-generated holes, screening the negative trapped charge and partially discharging surface deep levels. Under pulsed operation, kink dynamics is governed by hole emission and capture phenomena, prevailing at low and high drain-source voltages, respectively. At high drain-source voltages, in particular, the drain-current time constant depends on impact ionization, the latter controlling surface hole density and, through it, hole capture rate.
International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO)
Vienna (Austria)
Nov. 2001
137
142
Mazzanti, Andrea; Verzellesi, Giovanni; Vicini, L.; Canali, Claudio; Chini, Alessandro; Meneghesso, G.; Zanoni, E.; Lanzieri, C.
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Vicini, L.; Canali, Claudio; Chini, Alessandro; Meneghesso, G.; Zanoni, E.; Lanzieri, C.. - STAMPA. - (2001), pp. 137-142. ((Intervento presentato al convegno International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO) tenutosi a Vienna (Austria) nel Nov. 2001 [10.1109/EDMO.2001.974297].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/308161
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