The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a Am-241 source in vacumn led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias. (C) 1999 Elsevier Science B.V. All rights reserved.
Epitaxial silicon carbide charge particle detectors / Nava, Filippo; P., Vanni; C., Lanzieri; Canali, Claudio. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 437:(1999), pp. 354-358.
Epitaxial silicon carbide charge particle detectors
NAVA, Filippo;CANALI, Claudio
1999
Abstract
The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a Am-241 source in vacumn led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias. (C) 1999 Elsevier Science B.V. All rights reserved.
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