In a previous paper we showed how simple drift-diffusion simulations backed up the hypothesis of electron trapping at the device surface between gate and drain as a mechanism able to consistently explain all of the experimentally observed degradation modes following a high-field (hot carrier) stress. This paper expands on such previous findings by showing: (i) simulation results of HFETs with different recess geometries, and their implications on breakdown voltage and reliability; (ii) a detailed experimental and numerical investigation of surface trapping effects such as gate lag, transconductance frequency dispersion, and drain current kink, and their relationship with device degradation.

Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design / R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio. - STAMPA. - (2001), pp. 89-95. ((Intervento presentato al convegno GaAs Reliability Workshop tenutosi a Baltimore (Maryland, USA) nel Oct. 2001.

Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design

VERZELLESI, Giovanni;BORGARINO, Mattia;CANALI, Claudio
2001

Abstract

In a previous paper we showed how simple drift-diffusion simulations backed up the hypothesis of electron trapping at the device surface between gate and drain as a mechanism able to consistently explain all of the experimentally observed degradation modes following a high-field (hot carrier) stress. This paper expands on such previous findings by showing: (i) simulation results of HFETs with different recess geometries, and their implications on breakdown voltage and reliability; (ii) a detailed experimental and numerical investigation of surface trapping effects such as gate lag, transconductance frequency dispersion, and drain current kink, and their relationship with device degradation.
GaAs Reliability Workshop
Baltimore (Maryland, USA)
Oct. 2001
89
95
R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design / R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio. - STAMPA. - (2001), pp. 89-95. ((Intervento presentato al convegno GaAs Reliability Workshop tenutosi a Baltimore (Maryland, USA) nel Oct. 2001.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/467024
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