Results are presented showing the radiation response of ac-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested and the radiation induced variations of the dc electrical parameters have been analyzed. Long term post-irradiation behaviour of detector characteristics have been studied, and the relevant room temperature annealing phenomena have been discussed.
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION / Bacchetta, N; Bisello, D; Canali, Claudio; Fuochi, Pg; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 40:(1993), pp. 2001-2007.
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION
CANALI, Claudio;VERZELLESI, Giovanni
1993
Abstract
Results are presented showing the radiation response of ac-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested and the radiation induced variations of the dc electrical parameters have been analyzed. Long term post-irradiation behaviour of detector characteristics have been studied, and the relevant room temperature annealing phenomena have been discussed.
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