Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs / Basile, Alberto Francesco; Mazzanti, Andrea; E., Manzini; Verzellesi, Giovanni; Canali, Claudio; R., Pierobon; C., Lanzieri. - STAMPA. - (2002), pp. 63-68. (Intervento presentato al convegno 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 tenutosi a Manchester (UK) nel Nov. 2002) [10.1109/EDMO.2002.1174931].
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs
BASILE, Alberto Francesco;MAZZANTI, Andrea;VERZELLESI, Giovanni;CANALI, Claudio;
2002
Abstract
Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.
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