A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is described. The technique is based on impact-ionization-induced base current reversal and enables RB to be measured as a function of collector-base voltage and of emitter current. To obtain accurate results, the influence of the Early effect on the emitter-base voltage at constant emitter current must be accounted for. Measured values of R, are correlated with current crowding phenomena, which can be directly observed by means of emission microscopy.

A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors / Verzellesi, Giovanni; L., Vendrame; R., Turetta; Pavan, Paolo; A., Chantre; A., Marty; M., Cavone; R., Rivoir; E., Zanoni. - STAMPA. - (1992), pp. 413-416. ((Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a S. Francisco (California, USA) nel Dec. 1992.

A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors

VERZELLESI, Giovanni;PAVAN, Paolo;
1992

Abstract

A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is described. The technique is based on impact-ionization-induced base current reversal and enables RB to be measured as a function of collector-base voltage and of emitter current. To obtain accurate results, the influence of the Early effect on the emitter-base voltage at constant emitter current must be accounted for. Measured values of R, are correlated with current crowding phenomena, which can be directly observed by means of emission microscopy.
IEEE International Electron Devices Meeting (IEDM)
S. Francisco (California, USA)
Dec. 1992
413
416
Verzellesi, Giovanni; L., Vendrame; R., Turetta; Pavan, Paolo; A., Chantre; A., Marty; M., Cavone; R., Rivoir; E., Zanoni
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors / Verzellesi, Giovanni; L., Vendrame; R., Turetta; Pavan, Paolo; A., Chantre; A., Marty; M., Cavone; R., Rivoir; E., Zanoni. - STAMPA. - (1992), pp. 413-416. ((Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a S. Francisco (California, USA) nel Dec. 1992.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/467044
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