This paper presents an extensive analysis of the off-state conduction mechanisms in AlGaN/GaN Meta-Insulator-Semiconductor (MIS) transistors. Based on combined bi-dimensional numerical simulation and experimental measurements, we demonstrate the following relevant results: (i) under off-state bias conditions, the drain current can show a significant increase when the drain bias is swept up to 600 V; (ii) several mechanisms can be responsible for off-state current conduction, including band-to-band tunneling and impact ionization; (iii) two-dimensional numerical simulations indicate that band-to-band tunneling plays a major role, while impact ionization does not significantly contribute to the overall leakage. Temperature-dependent I-V measurements were also carried out to identify the origin of the vertical drain-bulk leakage.

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation / Marino, F. A.; Bisi, D.; Meneghini, M.; Verzellesi, Giovanni; Zanoni, E.; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, G.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 113:(2015), pp. 9-14. [10.1016/j.sse.2015.05.012]

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

VERZELLESI, Giovanni;
2015

Abstract

This paper presents an extensive analysis of the off-state conduction mechanisms in AlGaN/GaN Meta-Insulator-Semiconductor (MIS) transistors. Based on combined bi-dimensional numerical simulation and experimental measurements, we demonstrate the following relevant results: (i) under off-state bias conditions, the drain current can show a significant increase when the drain bias is swept up to 600 V; (ii) several mechanisms can be responsible for off-state current conduction, including band-to-band tunneling and impact ionization; (iii) two-dimensional numerical simulations indicate that band-to-band tunneling plays a major role, while impact ionization does not significantly contribute to the overall leakage. Temperature-dependent I-V measurements were also carried out to identify the origin of the vertical drain-bulk leakage.
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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation / Marino, F. A.; Bisi, D.; Meneghini, M.; Verzellesi, Giovanni; Zanoni, E.; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, G.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 113:(2015), pp. 9-14. [10.1016/j.sse.2015.05.012]
Marino, F. A.; Bisi, D.; Meneghini, M.; Verzellesi, Giovanni; Zanoni, E.; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1082019
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