An autonomous Radon sensor with wireless connectivity has been developed, using a BJT detector on high-resistivity silicon as alpha-particle detector. Charged Radon daughters are collected on the detector surface electrostatically. Thanks to the BJT internal amplification, real-time alpha particle detection is made possible using a very simple readout electronics which records alpha-particle arrival time and charge. Functional tests at known Radon concentrations demonstrated a sensitivity up to 4.9 cph/(100 Bq/m3), which translates into the capability of detecting a Radon concentration of 200±20 Bq/m3 and 500±50 Bq/m3 after 10 and 4 h, respectively. The count rate at nominally-zero Radon concentration was 0.05 cph.

Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon / A., Bosi; Bidinelli, Luca; Saguatti, Davide; G. F., Dalla Betta; V., Tyzhnevyi; Rovati, Luigi; Verzellesi, Giovanni; G., Batignani; S., Bettarini; F., Forti; F., D'Errico; A., Del Gratta; L., Bosisio; I., Rachevskaia; M., Boscardin; G., Giacomini; M., Calamosca; S., Penzo; F., Cardellini. - ELETTRONICO. - (2012), pp. 266-268. (Intervento presentato al convegno 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, NSS/MIC 2012 tenutosi a Anaheim, California, USA nel Oct. 29 - Nov. 3, 2012) [10.1109/NSSMIC.2012.6551105].

Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon

BIDINELLI, Luca;SAGUATTI, Davide;ROVATI, Luigi;VERZELLESI, Giovanni;
2012

Abstract

An autonomous Radon sensor with wireless connectivity has been developed, using a BJT detector on high-resistivity silicon as alpha-particle detector. Charged Radon daughters are collected on the detector surface electrostatically. Thanks to the BJT internal amplification, real-time alpha particle detection is made possible using a very simple readout electronics which records alpha-particle arrival time and charge. Functional tests at known Radon concentrations demonstrated a sensitivity up to 4.9 cph/(100 Bq/m3), which translates into the capability of detecting a Radon concentration of 200±20 Bq/m3 and 500±50 Bq/m3 after 10 and 4 h, respectively. The count rate at nominally-zero Radon concentration was 0.05 cph.
2012
2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, NSS/MIC 2012
Anaheim, California, USA
Oct. 29 - Nov. 3, 2012
266
268
A., Bosi; Bidinelli, Luca; Saguatti, Davide; G. F., Dalla Betta; V., Tyzhnevyi; Rovati, Luigi; Verzellesi, Giovanni; G., Batignani; S., Bettarini; F., Forti; F., D'Errico; A., Del Gratta; L., Bosisio; I., Rachevskaia; M., Boscardin; G., Giacomini; M., Calamosca; S., Penzo; F., Cardellini
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon / A., Bosi; Bidinelli, Luca; Saguatti, Davide; G. F., Dalla Betta; V., Tyzhnevyi; Rovati, Luigi; Verzellesi, Giovanni; G., Batignani; S., Bettarini; F., Forti; F., D'Errico; A., Del Gratta; L., Bosisio; I., Rachevskaia; M., Boscardin; G., Giacomini; M., Calamosca; S., Penzo; F., Cardellini. - ELETTRONICO. - (2012), pp. 266-268. (Intervento presentato al convegno 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, NSS/MIC 2012 tenutosi a Anaheim, California, USA nel Oct. 29 - Nov. 3, 2012) [10.1109/NSSMIC.2012.6551105].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/903289
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