In the present work a consistent set of experimental and numerical results are presented, addressing dc-to-RF dispersion effects in FETs of two different technologies, namely AlGaAs/GaAs heterostructure FETs (HFETs) and AlGaN/GaN HEMTs. Numerical device simulations suggest that, differently from what commonly assumed, surface traps can behave, during the switching transients of both device types, as hole traps interacting with holes attracted at the ungated surface by surface band bending.
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs / Verzellesi, Giovanni; Mazzanti, Andrea; Canali, Claudio; Meneghesso, G.; Chini, Alessandro; Zanoni, E.. - STAMPA. - 2003-:(2003), pp. 155-156. (Intervento presentato al convegno 2003 GaAs Reliability Workshop tenutosi a San Diego (California, USA) nel 9 Nov. 2003) [10.1109/GAASRW.2003.183773].
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs
VERZELLESI, Giovanni;MAZZANTI, Andrea;CANALI, Claudio;CHINI, Alessandro;
2003
Abstract
In the present work a consistent set of experimental and numerical results are presented, addressing dc-to-RF dispersion effects in FETs of two different technologies, namely AlGaAs/GaAs heterostructure FETs (HFETs) and AlGaN/GaN HEMTs. Numerical device simulations suggest that, differently from what commonly assumed, surface traps can behave, during the switching transients of both device types, as hole traps interacting with holes attracted at the ungated surface by surface band bending.
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