We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications / Dalla Betta, Gian franco; Batignani, Giovanni; Benkechkache, Mohamed El Amine; Bettarini, Stefano; Casarosa, Giulia; Comotti, Daniele; Fabris, Lorenzo; Forti, Francesco; Grassi, Marco; Latreche lassoued, Saida; Lodola, Luca; Malcovati, Piero; Manghisoni, Massimo; Mendicino, Roberto; Morsani, Fabio; Paladino, Antonio; Pancheri, Lucio; Paoloni, Eugenio; Ratti, Lodovico; Re, Valerio; Rizzo, Giuliana; Traversi, Gianluca; Vacchi, Carla; Verzellesi, Giovanni; Xu, Hesong. - (2014), pp. 1-3. (Intervento presentato al convegno IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014 tenutosi a Seattle, WA, USA nel 8-15 Nov. 2014) [10.1109/NSSMIC.2014.7431078].
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications
VERZELLESI, Giovanni;
2014
Abstract
We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.
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