We report on the design and the experimental characterization of a new 3-D image sensor, based on a new 180-nm CMOS-compatible photo-detector, which features an internal demodulation mechanism effective up to high frequencies. The distance range covered by our proof-of-concept device spans from 1 m to a few meters, and the resolution is about 1 cm.
A 180-nm CMOS Time-of-Flight 3-D Image Sensor / G. F., Dalla Betta; L., Pancheri; D., Stoppa; S., Donati; G., Martini; Verzellesi, Giovanni. - ELETTRONICO. - (2010), pp. 1-3. ((Intervento presentato al convegno 2010 9th Euro-American Workshop on Information Optics, WIO 2010 tenutosi a Helsinki, Finland nel July 2010 [10.1109/WIO.2010.5582487].
A 180-nm CMOS Time-of-Flight 3-D Image Sensor
VERZELLESI, Giovanni
2010-01-01
Abstract
We report on the design and the experimental characterization of a new 3-D image sensor, based on a new 180-nm CMOS-compatible photo-detector, which features an internal demodulation mechanism effective up to high frequencies. The distance range covered by our proof-of-concept device spans from 1 m to a few meters, and the resolution is about 1 cm.
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