A junction termination structure for silicon radiation detectors is investigated, featuring all-p-type multiguard and scribe-line implants, with metal field-plates providing complete coverage of the oxide upper surface above non-implanted regions. The sensitive interface between oxide and n-type substrate is thus electrostatically screened from the external environment, holding the promise for improved long-term stability of the device and excellent insensitivity to ambient conditions. Careful design of the multiguard layout enables high-voltage operation to be achieved. With respect to a previously proposed structure, the adoption of alternate outward and inward field plates between adjacent rings allows a large improvement in the voltage handling capability.
An improved all-p-type multiguard termination structure for silicon radiation detectors / M., Boscardin; L., Bosisio; A., Candelori; G. F., DALLA BETTA; S., Dittongo; P., Gregori; A., Litovchenko; C., Piemonte; I., Rachevskaia; S, Ronchin; Verzellesi, Giovanni; N., Zorzi. - ELETTRONICO. - 1:(2002), pp. 264-268. (Intervento presentato al convegno 2002 IEEE Nuclear Science Symposium Conference Record tenutosi a Norfolk, VA, usa nel Nov. 2002).
An improved all-p-type multiguard termination structure for silicon radiation detectors
VERZELLESI, Giovanni;
2002
Abstract
A junction termination structure for silicon radiation detectors is investigated, featuring all-p-type multiguard and scribe-line implants, with metal field-plates providing complete coverage of the oxide upper surface above non-implanted regions. The sensitive interface between oxide and n-type substrate is thus electrostatically screened from the external environment, holding the promise for improved long-term stability of the device and excellent insensitivity to ambient conditions. Careful design of the multiguard layout enables high-voltage operation to be achieved. With respect to a previously proposed structure, the adoption of alternate outward and inward field plates between adjacent rings allows a large improvement in the voltage handling capability.
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