A junction termination structure for silicon radiation detectors is investigated, featuring all-p-type multiguard and scribe-line implants, with metal field-plates providing complete coverage of the oxide upper surface above non-implanted regions. The sensitive interface between oxide and n-type substrate is thus electrostatically screened from the external environment, holding the promise for improved long-term stability of the device and excellent insensitivity to ambient conditions. Careful design of the multiguard layout enables high-voltage operation to be achieved. With respect to a previously proposed structure, the adoption of alternate outward and inward field plates between adjacent rings allows a large improvement in the voltage handling capability.

An improved all-p-type multiguard termination structure for silicon radiation detectors / M., Boscardin; L., Bosisio; A., Candelori; G. F., DALLA BETTA; S., Dittongo; P., Gregori; A., Litovchenko; C., Piemonte; I., Rachevskaia; S, Ronchin; Verzellesi, Giovanni; N., Zorzi. - ELETTRONICO. - (2002), pp. 264-268. ((Intervento presentato al convegno IEEE Nuclear Science Symposium (NSS) tenutosi a Norfolk (Virginia, USA) nel Nov. 2002.

An improved all-p-type multiguard termination structure for silicon radiation detectors

VERZELLESI, Giovanni;
2002

Abstract

A junction termination structure for silicon radiation detectors is investigated, featuring all-p-type multiguard and scribe-line implants, with metal field-plates providing complete coverage of the oxide upper surface above non-implanted regions. The sensitive interface between oxide and n-type substrate is thus electrostatically screened from the external environment, holding the promise for improved long-term stability of the device and excellent insensitivity to ambient conditions. Careful design of the multiguard layout enables high-voltage operation to be achieved. With respect to a previously proposed structure, the adoption of alternate outward and inward field plates between adjacent rings allows a large improvement in the voltage handling capability.
IEEE Nuclear Science Symposium (NSS)
Norfolk (Virginia, USA)
Nov. 2002
264
268
M., Boscardin; L., Bosisio; A., Candelori; G. F., DALLA BETTA; S., Dittongo; P., Gregori; A., Litovchenko; C., Piemonte; I., Rachevskaia; S, Ronchin; Verzellesi, Giovanni; N., Zorzi
An improved all-p-type multiguard termination structure for silicon radiation detectors / M., Boscardin; L., Bosisio; A., Candelori; G. F., DALLA BETTA; S., Dittongo; P., Gregori; A., Litovchenko; C., Piemonte; I., Rachevskaia; S, Ronchin; Verzellesi, Giovanni; N., Zorzi. - ELETTRONICO. - (2002), pp. 264-268. ((Intervento presentato al convegno IEEE Nuclear Science Symposium (NSS) tenutosi a Norfolk (Virginia, USA) nel Nov. 2002.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/467031
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