A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multiguards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved.
An all-p-type termination structure for silicon microstrip detectors / G. F., DALLA BETTA; M., Boscardin; L., Bosisio; S., Dittongo; P., Gregori; I., Rachevskaia; Verzellesi, Giovanni; N., Zorzi. - ELETTRONICO. - 2:(2001), pp. 906-908. (Intervento presentato al convegno 2001 IEEE Nuclear Science Symposium Conference Record tenutosi a San Diege, CA, usa nel Nov. 2001) [10.1109/NSSMIC.2001.1009702].
An all-p-type termination structure for silicon microstrip detectors
VERZELLESI, Giovanni;
2001
Abstract
A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multiguards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
