Radiation effects have been studied on single-sided FOXFET biased detectors and related test patterns. Radiation induced modifications of the electrical parameters and their thermal stability at room temperature and upon annealings have been studied for proton and gamma irradiations. The detector electrical characteristics have been correlated to Si bulk and surface damage, and to changes of the FOXFET properties. Interstrip resistance and capacitance have been investigated for gamma, p+ and n irradiations.
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY / Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Giraldo, A; Gotra, Y; Paccagnella, A; Piacentino, Gm; Verzellesi, Giovanni. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 342:(1994), pp. 39-48.
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY
CANALI, Claudio;VERZELLESI, Giovanni
1994
Abstract
Radiation effects have been studied on single-sided FOXFET biased detectors and related test patterns. Radiation induced modifications of the electrical parameters and their thermal stability at room temperature and upon annealings have been studied for proton and gamma irradiations. The detector electrical characteristics have been correlated to Si bulk and surface damage, and to changes of the FOXFET properties. Interstrip resistance and capacitance have been investigated for gamma, p+ and n irradiations.
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