Measurements of the impact-ionization multiplication coefficient M - 1 in advanced Si BJT's up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9 . 10(5) V/cm) are presented. The intrinsic limitations affecting M - 1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M - 1 measurements is pointed out An accurate theoretical prediction of the M - 1 coefficient at collector-base voltages close to BV(CBO) requires that the contribution of holes to impact ionization be properly accounted for.

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs / E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 14:(1993), pp. 69-71.

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs

PAVAN, Paolo;VERZELLESI, Giovanni;CANALI, Claudio
1993

Abstract

Measurements of the impact-ionization multiplication coefficient M - 1 in advanced Si BJT's up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9 . 10(5) V/cm) are presented. The intrinsic limitations affecting M - 1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M - 1 measurements is pointed out An accurate theoretical prediction of the M - 1 coefficient at collector-base voltages close to BV(CBO) requires that the contribution of holes to impact ionization be properly accounted for.
1993
14
69
71
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs / E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 14:(1993), pp. 69-71.
E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/303474
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 36
  • ???jsp.display-item.citation.isi??? 30
social impact