PIN radiation detectors and other test-structures have been fabricated on a FZ, high resistivity (2 kΩ·cm), n-type silicon substrate by a process that features three different, alternative extrinsic-gettering techniques. Extremely-low leakage-current values have been measured regardless of the gettering technique adopted, this confirming the effectiveness of gettering procedures in limiting the detector leakage current. In particular, devices exploiting a phosphorus-doped polysilicon backside layer as gettering site have shown the best results in terms of leakage-current and generation-lifetime values. Results from the electrical and optical characterization of such devices are reported and discussed.

A test chip for the development of PIN-type silicon radiation detectors / G. F., Dalla Betta; M., Boscardin; Verzellesi, Giovanni; G. U., Pignatel; A., Fazzi; G., Soncini. - STAMPA. - (1996), pp. 231-235. ((Intervento presentato al convegno IEEE International Conference on Microelectronic Test Structures (ICMTS) tenutosi a Trento (Italy) nel Mar. 1996.

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