High performance SiC detectors for ionising radiation have been designed, manufactured and tested. Schottky junctions on low-doped epitaxial 4H-SiC with leakage current densities of few pA/cm(2) at room temperature has been realised at this purpose. The epitaxial layer has been characterised at different dose of radiations in order to investigate the SiC radiation hardness. The response of the detectors to alpha and beta particle and to soft X-ray have been measured. High energy resolution and full charge collection efficiency have been successfully demonstrated.
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors / Bertuccio, G; Binetti, S; Caccia, S; Casiraghi, R; Castaldini, A; Cavallini, A; Lanzieri, C; Le Donne, A; Nava, Filippo; Pizzini, S; Rigutti, L; Verzellesi, Giovanni; Vittone, E.. - STAMPA. - 483-485:(2005), pp. 1015-1020. (Intervento presentato al convegno 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 tenutosi a Bologna, ita nel AUG 31-SEP 04, 2004) [10.4028/www.scientific.net/MSF.483-485.1015].