0.25µm GaN HEMTs performance dependence from epitaxial and geometrical parameters has been investigated by means of numerical simulations. A single-heterojunction GaN HEMT structure with an iron doped buffer layer also including a mushroom-gate layout forming a gate-connected field-plate over the device SiN passivation layer was considered. Numerical simulations including static-IV characteristics and breakdown voltage estimation, small signal analysis and double pulse-IV characteristics have been carried out on more than 400 different structures. Simulations results showed that contact resistance, gate-source spacing, barrier thickness and AlGaN/SiN interface trap density are critical for improving device RF gain. Field-plate extension and passivation layer thickness were found to be parameters that can be used for trading off between device breakdown voltage and RF gain. Increasing iron-doping in the buffer layer leaded to larger breakdown voltage and RF gain but, due to the enhanced trapping effects, also to poorer large-signal operation.

Optimization of 0.25µm GaN HEMTs through numerical simulations / Chini, Alessandro; Verzellesi, Giovanni; Lanzieri, Claudio; Pantellini, Alessio; Rzin, Mehdi; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico. - (2018). ((Intervento presentato al convegno 9th wide band gap semiconductor and components workshop tenutosi a Harwell (UK) nel 8-9 October 2018.

Optimization of 0.25µm GaN HEMTs through numerical simulations

Alessandro Chini;Giovanni Verzellesi;
2018

Abstract

0.25µm GaN HEMTs performance dependence from epitaxial and geometrical parameters has been investigated by means of numerical simulations. A single-heterojunction GaN HEMT structure with an iron doped buffer layer also including a mushroom-gate layout forming a gate-connected field-plate over the device SiN passivation layer was considered. Numerical simulations including static-IV characteristics and breakdown voltage estimation, small signal analysis and double pulse-IV characteristics have been carried out on more than 400 different structures. Simulations results showed that contact resistance, gate-source spacing, barrier thickness and AlGaN/SiN interface trap density are critical for improving device RF gain. Field-plate extension and passivation layer thickness were found to be parameters that can be used for trading off between device breakdown voltage and RF gain. Increasing iron-doping in the buffer layer leaded to larger breakdown voltage and RF gain but, due to the enhanced trapping effects, also to poorer large-signal operation.
9th wide band gap semiconductor and components workshop
Harwell (UK)
8-9 October 2018
Chini, Alessandro; Verzellesi, Giovanni; Lanzieri, Claudio; Pantellini, Alessio; Rzin, Mehdi; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Optimization of 0.25µm GaN HEMTs through numerical simulations / Chini, Alessandro; Verzellesi, Giovanni; Lanzieri, Claudio; Pantellini, Alessio; Rzin, Mehdi; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico. - (2018). ((Intervento presentato al convegno 9th wide band gap semiconductor and components workshop tenutosi a Harwell (UK) nel 8-9 October 2018.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1167438
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